Photoresist Stripping Agent Composition for Low-Temperature Circuit Manufacturing
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Solution Overview
Problem
Conventional photoresist stripping agents are either highly corrosive to wiring materials like aluminum and copper, requiring complex processes involving organic solvents for rinsing, or they are inefficient in removing photoresist residues and side-wall polymers, especially at low temperatures.
Innovation Solution
A photoresist stripping agent composition comprising specific acid amides, alkanolamines, alkoxyalkylamines, saccharides or sugar alcohols, and water, which allows for efficient stripping of photoresist films and residues at low temperatures without corroding wiring materials, eliminating the need for organic solvents and enabling high-accuracy circuit manufacturing with water rinsing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional amine-based stripping agents are used, then photoresist stripping capability is improved, but corrosion of wiring materials occurs due to alkalinity from moisture absorption
Solution Approach 1:
The invention changes the chemical composition parameters by introducing specific acid amides (formula I) with controlled pKa values (12-16) and specific structural features (R1, R2, R3 groups). This parameter change allows the stripping agent to maintain effective stripping capability while controlling alkalinity to prevent corrosion of aluminum and copper wiring materials.
Solution Approach 2:
The invention creates a composite stripping agent system combining amine compounds (alkanolamines, alkoxyalkylamines, or alkoxyalkanolamines) with specific acid amides (formula I) and water. This composite formulation achieves synergistic effects where the acid amide component modulates the alkalinity while the amine component provides stripping power, resolving the contradiction between effectiveness and corrosion prevention.
2Object-affected harmful factors
If water-free organic amine stripping agents are used, then corrosion of wiring materials is reduced, but stripping power against etched resist films and residues becomes insufficient
Solution Approach 1:
The invention optimizes the water content parameter (1-65% by mass) and the acid amide structure parameters (formula I with specific R groups) to achieve maximum stripping power. The controlled presence of water and specific acid amide structure enables effective penetration and removal of etched resist films and residues while maintaining low corrosiveness.
Solution Approach 2:
The acid amide (formula I) acts as an intermediary substance that bridges between the amine base and the resist residues. It facilitates the stripping action on etched films and residues while moderating the alkalinity, thus enabling effective removal without excessive corrosion.
3Object-affected harmful factors
If conventional organic amine stripping agents are used, then corrosion is minimized, but removal of side-wall polymers and complex resist residues is unsatisfactory
Solution Approach 1:
The invention changes the chemical structure parameters by specifying acid amides with formula (I) where R1 is H or OH and R2, R3 are C1-C4 alkyl groups. This structural parameter change provides specific chemical affinity for side-wall polymers and complex resist residues, enabling effective removal while maintaining low corrosiveness through controlled alkalinity.
Solution Approach 2:
The invention introduces local chemical quality through the specific acid amide structure (formula I) that targets specific types of resist residues and side-wall polymers. The R1 hydroxyl group option provides localized hydroxyl functionality that enhances interaction with polymer structures, while the overall molecular structure maintains moderate alkalinity to prevent corrosion.
4Ease of operation
If water-containing alkanolamine stripping agents are used, then process simplicity is improved by water rinsing, but stripping speed and effectiveness become insufficient
Solution Approach 1:
The invention optimizes the concentration parameters of amine (5-50% by mass), acid amide (10-60% by mass), and water (10-80% by mass) to achieve rapid stripping action. The specific ratio parameters enable fast penetration and reaction with resist materials, providing high stripping speed that maintains effectiveness while allowing simple water rinsing completion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively strips photoresist films and residues at low temperatures in a short time, prevents corrosion of wiring materials, and simplifies the manufacturing process by allowing water rinsing alone, enhancing the accuracy and efficiency of circuit wiring production.
Implementation Method 1
a stripping agent composition comprising a specific acid amide, an alkanolamine compound, an alkoxyalkylamine compound, or an alkoxyalkanolamine compound, a saccharide or a sugar alcohol, and water which can easily strip a photoresist film
Implementation Method 2
the amine dissociates with moisture absorbed in use, and, as a result, the stripping agent is rendered alkaline... the composition... does not corrode a wiring material at all
Data Source
AI summary
Disclosed is a stripping agent that can easily strip a photoresist residue and the like at a low temperature in a short time and, at the same time, does not corrode a wiring material at all and has no need to use an organic solvent such as alcohol as a rinsing liquid. The stripping agent disclosed herein comprises 5 to 50% by mass of a specific amine, 30 to 65% by mass of a specific acid amide, 0.1 to 15% by mass of a saccharide or a sugar alcohol, and 1 to 64.5% by mass of water.