Negative Photoresist Composition for Sub-20 Nm Etch-Resistant Patterning
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Solution Overview
Problem
Existing resist materials struggle to achieve both etching resistance and lithography properties, particularly in forming patterns with dimensions smaller than 20 nanometers, as the progress in lithography technologies demands improved performance.
Innovation Solution
A negative photosensitive composition comprising a silicon-containing polymer with phenolic hydroxy groups, a photoacid generating agent containing a sulfonium cation with an iodine atom, and a crosslinking agent is used to form a patterned cured film, enhancing both etching resistance and lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a silicon-containing compound is used as a base material component to improve etching resistance, then etching resistance is improved, but lithography properties and resolution for very small pattern dimensions deteriorate
Solution Approach 1:
The patent uses a composite resin system combining silicon-containing polymer (for etching resistance) with specific photoacid generating agents and crosslinking agents. This composite approach allows the material to simultaneously achieve both etching resistance and lithography properties by leveraging the complementary characteristics of each component rather than relying on a single material.
Solution Approach 2:
The patent modifies the chemical structure and properties of the base material by introducing specific functional groups (phenolic hydroxy groups) and controlling the molecular weight and composition ratios of the silicon-containing polymer. These parameter changes enable the material to balance etching resistance with lithography performance for sub-20nm pattern formation.
2Length of moving object
If the wavelength of exposure light source is shortened to miniaturize patterns, then pattern dimension is reduced, but achieving both etching resistance and lithography properties becomes more difficult
Solution Approach 1:
The patent introduces photoacid generating agents as intermediary substances that mediate between the exposure light and the base material. These agents generate photoacids upon exposure, which then catalyze the crosslinking reaction and solubility changes, enabling the material to respond appropriately to short-wavelength exposure while maintaining both etching resistance and lithography properties.
Solution Approach 2:
The patent replaces direct mechanical interaction with chemical interaction mechanisms. Instead of relying solely on the physical properties of the base material, it uses photoacid generation and catalytic crosslinking as chemical mechanisms to achieve the desired lithography performance and etching resistance simultaneously, enabling sub-20nm pattern formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of patterns with very small dimensions while maintaining excellent etching resistance and lithography properties, suitable for advanced semiconductor and liquid crystal display device manufacturing.
Implementation Method 1
an acid generation agent component to generate an acid upon exposure
Implementation Method 2
a crosslinking agent (C)... forming a patterned cured film
Data Source
AI summary
A negative photosensitive composition having both an etching resistance and good lithography properties, and capable of forming patterns with very small dimensions, and a method for producing a patterned cured film. The negative photosensitive composition includes a silicon-containing polymer including a phenolic hydroxy group, a photoacid generating agent, and a crosslinking agent, and the photoacid generating agent includes a photoacid generating agent) having a sulfonium cation including an iodine atom.