Photoresist Surface Layer Segregation for Defect Reduction
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Solution Overview
Problem
Negative tone development processes in photolithography suffer from surface inhibition issues such as 'necking' and 'T-topping' in contact holes and line/trench patterns, leading to poor process windows, depth of focus, and exposure latitude, resulting in defects like missing contact holes and micro-bridging.
Innovation Solution
A photoresist composition comprising a matrix polymer with acid-labile groups, an additive polymer with a lower surface energy, and a photoacid generator, which segregates during coating to form a surface layer that controls stray light and reduces patterning defects, allowing for improved focus and exposure latitude without a topcoat layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If negative tone development is used to achieve superior imaging quality, then pattern formation capability is improved, but surface inhibition effects (necking and T-topping) occur
Solution Approach 1:
The patent applies local quality by introducing a surface treatment layer with different chemical properties (lower surface energy) than the bulk resist. This creates a gradient where the surface layer has enhanced properties for preventing necking and T-topping, while the bulk resist maintains its photoacid generator functionality for pattern formation.
Solution Approach 2:
The invention uses composite materials by combining the base photoresist polymer with a surface treatment polymer that has lower surface energy. This composite structure allows the surface layer to exhibit different solubility and surface energy characteristics, effectively suppressing surface inhibition effects while maintaining the overall resist's photoacid generator capability.
2Measurement precision
If photoacid generator is added to enhance photoacid formation, then exposure sensitivity is improved, but surface inhibition and stray light diffusion increase
Solution Approach 1:
The patent extracts the photoacid generator from the surface layer and places it in the bulk resist layer. By removing the PAG from the surface treatment layer, the invention eliminates the source of harmful photoacid formation at the surface that causes necking and T-topping, while maintaining exposure sensitivity through the PAG in the bulk resist.
Solution Approach 2:
The surface treatment layer acts as an intermediary between the bulk resist and the environment. It provides a protective function by preventing stray light diffusion and suppressing surface inhibition effects, while allowing the bulk resist to contain the photoacid generator for controlled photoacid formation.
3Manufacturing precision
If topcoat layer is added to suppress surface inhibition, then pattern quality is improved, but device complexity increases
Solution Approach 1:
The patent merges the surface treatment function with the bulk resist by incorporating a surface treatment polymer directly into the resist composition. This eliminates the need for a separate topcoat layer, reducing structural complexity while maintaining pattern quality through the integrated surface layer with lower surface energy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides uniform resist patterns with reduced defects, improved focus and exposure latitude, and minimized necking and T-topping, enhancing the yield of electronic devices by effectively addressing surface inhibition issues in negative tone development.
Implementation Method 1
Exposure to actinic radiation causes the photoacid generator to form an acid
Implementation Method 2
a second polymer having a lower surface energy than a surface energy of the first polymer
Implementation Method 3
a difference in solubility characteristics in organic developers is created between exposed and unexposed regions of the resist
Data Source
AI summary
Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.


