Photoresist UV Precuring for Bubble-Free MO Spacer Etching

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Solution Overview

Problem

The formation of unwanted bubble defects during the spacer etch process in semiconductor manufacturing, particularly when using metal oxide (MO) spacers, limits the scalability and effectiveness of techniques like Self-Aligned Quadruple Patterning (SAQP) and Self-Aligned Double Patterning (SADP).

Innovation Solution

A precuring or pre-exposure operation is performed by exposing the photoresist (PR) layer to ultraviolet (UV) light before depositing or etching a MO layer, which helps in reducing the formation of bubble defects by making the PR layer immune to further UV exposure during the MO deposition or etching process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a MO layer is deposited or etched onto a photoresist layer during spacer etch process, then spacer features are formed for multi-patterning, but bubble defects are generated on the photoresist layer

Engineering Contradiction:
Improvespacer feature formationVSAvoidbubble defects
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The photoresist layer is precured by exposing it to UV light before the MO layer deposition or etching process. This preliminary curing action modifies the photoresist properties in advance, making it resistant to bubble defect formation during subsequent processing steps while maintaining its ability to form precise spacer features

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The UV exposure precuring changes the physical and chemical parameters of the photoresist layer, such as crosslinking density and thermal stability, which prevents bubble formation during MO layer processing without affecting the spacer pattern fidelity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed method significantly reduces or eliminates the occurrence of bubble defects, thereby enhancing the scalability and efficiency of MO-based spacer technologies in semiconductor manufacturing, such as SAQP and SADP.

Implementation Method 1

A precuring or pre-exposure operation is performed by exposing the photoresist (PR) layer to ultraviolet (UV) light before depositing or etching a MO layer

Methodology Applied
Scientific EffectPhotopolymerisation: Photopolymerisation

Data Source

PatentUS12248252B2Bubble defect reduction
Publication Date: 2025.03.11 LAM RES CORP
  • US12248252B2 patent drawing
  • US12248252B2 patent drawing

AI summary

In some examples, a method of processing a substrate comprises applying a photoresist (PR) onto a surface of the substrate, pre-exposing the PR to ultra violet (UV) light before depositing or etching a metal oxide (MO) layer onto the PR, and depositing or etching a MO layer onto the PR subsequent to pre-exposing the PR to UV light.