Photosensitive Composition for Digital Lithography

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Solution Overview

Problem

Conventional positive type photoresists with major absorption wavelengths at 365 nm are not suitable for digital lithography technology using an exposure light source of about 403 nm, necessitating a photosensitizer with absorption at 400 nm for effective use in digital lithography.

Innovation Solution

A photosensitive compound with a specific chemical structure, synthesized by chemically reducing anthraquinone and reacting it with sulfonyl halide-containing diazonaphthoquinone, is combined with a resin and diluent to form a photosensitive composition suitable for digital lithography, optimizing light absorption at 400 nm to 420 nm and providing a balanced composition to prevent residue and peeling issues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a photosensitizer with major absorption wavelength at 365 nm is used, then the photoresist can be used with conventional photomask lithography, but it cannot be used in digital lithography technology with an exposure light source of about 403 nm

Engineering Contradiction:

Improvecompatibility with digital lithography exposure light sourceVSAvoidabsorption wavelength match with photomask

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent modifies the absorption wavelength parameter of the photosensitizer by chemically reducing anthraquinone to anthracene and reacting it with diazonaphthoquinone derivatives, shifting the absorption maximum from 365 nm to 400-420 nm to match digital lithography exposure sources

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite photosensitive system combining reduced anthraquinone (providing 400 nm absorption) with diazonaphthoquinone sulfonyl halide (providing photosensitivity and solubility properties), achieving both digital lithography compatibility and effective photoresist function

Inventive Principle:

Principle #40Composite materials

2Reliability

If the photosensitive composition contains high resin content to prevent residue, then adhesion is improved, but the development window becomes shorter and pattern resolution decreases

Engineering Contradiction:

Improveadhesion and residue preventionVSAvoidpattern resolution and development window

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent optimizes the resin-to-photosensitive compound ratio parameter, finding that a balanced composition with controlled resin content (along with specific diluent ratios) achieves both good adhesion and high pattern resolution, avoiding the trade-off between residue prevention and manufacturing precision

Inventive Principle:

Principle #35Parameter changes

3Stability of the object's composition

If the photosensitive composition contains high diluent content to improve coating uniformity, then the photoresist layer forms properly, but the film becomes too thin and overdevelops

Engineering Contradiction:

Improvecoating uniformityVSAvoidfilm thickness control and development accuracy

Core Design Contradiction:

Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent optimizes the diluent content parameter within a specific range, balancing coating uniformity with film thickness control, and combines this with optimized resin and photosensitive compound ratios to prevent overdevelopment while maintaining proper film formation

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The photosensitive composition offers a wider adjustable range of photosensitive group equivalent ratios, a longer development window, and higher pattern resolution, ensuring effective patterning and adhesion in digital lithography processes.

Implementation Method 1

The photosensitive composition has a light absorption wavelength at about 400 nm

Methodology Applied

Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 2

The diluent in the photosensitive composition is then evaporated by baking to form a photoresist layer on the material layer

Methodology Applied

Scientific EffectEvaporation: Evaporation

Data Source

PatentUS11675266B2Photosensitive compound, photosensitive composition, and patterning method

Publication Date: 2023.06.13 IND TECH RES INST

AI summary

A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure ofThe patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.