Photosensitive Element Structure Using MoOx Hole Transport Layer
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Solution Overview
Problem
Traditional photosensitive elements for fingerprint identification using P-type materials are costly and have low hole transport efficiency due to the high cost of P-type material preparation and low hole transport efficiency.
Innovation Solution
A photosensitive element is developed using a substrate with an N-type doped silicon layer, an undoped silicon layer, and a molybdenum oxide layer, where the molybdenum oxide layer acts as the hole transport layer, replacing the P-type material in homojunction or heterojunction structures, reducing material preparation demands and improving hole transmission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If P-type materials are used to form homojunction or heterojunction structures for photosensitive devices, then the device structure can be established, but the cost increases and hole transport efficiency decreases
Solution Approach 1:
The patent changes the doping type parameter from P-type to N-type silicon material, fundamentally altering the electrical properties of the photosensitive device. This parameter change enables the use of N-type silicon with higher electron mobility and better hole transport characteristics, resolving both the cost and efficiency issues associated with P-type materials
Solution Approach 2:
The patent employs standard N-type silicon materials that are more readily available and less expensive than specialized P-type materials. By using commercially abundant N-type silicon wafers and layers, the invention reduces material costs while maintaining device functionality through alternative structural design
2Reliability
If P-type materials are used in photosensitive elements, then the homojunction or heterojunction structure can be formed, but the preparation process becomes more complex and costly
Solution Approach 1:
The patent changes the fundamental doping parameter from P-type to N-type, simplifying the material selection and preparation process. N-type silicon is a more common and easier-to-handle material in standard semiconductor fabrication, reducing the complexity of material preparation while improving device performance through better carrier transport properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces costs and enhances the performance of the photosensitive element by improving hole transport efficiency, leading to higher quantum efficiency and sensitivity, while maintaining low power consumption.
Implementation Method 1
a molybdenum oxide layer arranged on the undoped silicon layer... the molybdenum oxide layer acts as the hole transport layer
Implementation Method 2
an N-type doped silicon layer arranged on the first electrode... leading to higher quantum efficiency and sensitivity
Data Source
AI summary
The present invention provides a photosensitive element, and a preparation method and a display device thereof. The photosensitive element includes a substrate; a first electrode arranged on the substrate; an N-type doped silicon layer arranged on the first electrode; an undoped silicon layer arranged on the N-type doped silicon layer; a molybdenum oxide layer arranged on the undoped silicon layer; an insulating layer arranged on the molybdenum oxide layer and the substrate, wherein a first opening is arranged on the insulating layer to expose the molybdenum oxide layer; and a second electrode arranged on the insulating layer and the molybdenum oxide layer, wherein the second electrode contacts the molybdenum oxide layer through the first opening.