Photosensitive Assembly Insulating Layer Hydrogen Diffusion

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Solution Overview

Problem

The drift of threshold voltage (Vth) in OLED pixel circuits makes it difficult for existing thin-film transistors (TFTs) to meet electrical performance requirements, particularly due to hydrogen diffusion from photosensitive layers affecting the transistor's operation.

Innovation Solution

A photosensitive assembly is designed with a substrate, a thin-film transistor, and a photosensitive unit, where an insulating layer separates the active layer of the transistor from the photosensitive unit, preventing hydrogen from the photosensitive layer from entering the transistor's channel region, thus maintaining electrical performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If the photosensitive layer is placed close to the thin-film transistor to reduce device area, then the device complexity is reduced, but hydrogen from the photosensitive layer diffuses into the transistor channel region and degrades electrical performance

Engineering Contradiction:
Improvedevice structureVSAvoidelectrical performance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

An insulating layer is introduced as an intermediary barrier between the photosensitive layer and the thin-film transistor channel region. This insulating layer prevents hydrogen diffusion from the photosensitive layer into the transistor, thereby maintaining electrical performance while allowing the photosensitive unit to remain integrated with the transistor structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If the photosensitive unit is integrated with the thin-film transistor in the same layer, then the manufacturing process is simplified, but hydrogen contamination adversely affects the transistor's threshold voltage stability

Engineering Contradiction:
Improvemanufacturing processVSAvoidthreshold voltage
Core Design Contradiction:
Ease of manufactureVSStability of the object's composition

Solution Approach 1:

The insulating layer serves as a protective barrier that allows the photosensitive unit and thin-film transistor to be manufactured in an integrated process while preventing hydrogen contamination. This maintains threshold voltage stability by blocking hydrogen diffusion pathways during and after manufacturing.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The insulating layer is formed in advance during the manufacturing process, before hydrogen diffusion can occur. This preliminary protective action ensures that the transistor channel region is already protected when the photosensitive layer is subsequently processed or when hydrogen generation occurs during device operation.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively prevents hydrogen from adversely affecting the thin-film transistor's electrical performance, ensuring stable operation and improved display quality by isolating the hydrogen-rich photosensitive layer from the active transistor layer.

Implementation Method 1

an insulating layer between an active layer of the thin-film transistor and the photosensitive unit

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS11315977B2Photosensitive assembly and method for preparing the same, array substrate, and display device
Publication Date: 2022.04.26 BOE TECHNOLOGY GROUP CO LTD
  • US11315977B2 patent drawing
  • US11315977B2 patent drawing
  • US11315977B2 patent drawing

AI summary

Embodiments of the present disclosure provide a photosensitive assembly, a method for preparing the same, an array substrate, and a display device. The photosensitive assembly includes a substrate, a thin-film transistor and a photosensitive unit on a surface of the substrate, and an insulating layer between an active layer of the thin-film transistor and the photosensitive unit. The photosensitive unit includes a first electrode, a photosensitive layer, and a second electrode sequentially arranged on the substrate. The drain electrode of the thin-film transistor is electrically connected to the first electrode, the active layer is located on a surface of the insulating layer away from the substrate, and the photosensitive unit is located on a surface of the insulating layer proximate to the substrate.