Photo-Sensitized Interconnect Patterning With Reduced Etch Damage

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Solution Overview

Problem

Existing semiconductor and integrated circuit fabrication techniques face challenges such as dry etch loading, complex multi-layer mask requirements, and inadvertent damage to layers due to patterning, particularly as features become smaller and pattern density increases.

Innovation Solution

A method involving the use of a photo-sensitive material that changes its properties upon exposure to specific light wavelengths, allowing for precise patterning and formation of conductive elements or insulating features by selectively removing exposed or unexposed portions, utilizing cap layers to control light exposure and etching processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography techniques are used for patterning layers, then manufacturing precision is improved, but device complexity increases due to complicated multi-layer mask requirements

Engineering Contradiction:
Improvepatterning precisionVSAvoidmulti-layer mask requirements
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the complex multi-layer mask system from the photolithography process by using a simplified single-layer mask approach combined with selective etching techniques, thereby reducing device complexity while maintaining patterning precision

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent segments the patterning process into distinct stages using separate masks for different layers, allowing each mask to be optimized independently and reducing the need for complex multi-layer mask assemblies

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If feature size is reduced and pattern density is increased, then manufacturing precision is improved, but dry etch loading increases

Engineering Contradiction:
Improvefeature size controlVSAvoiddry etch loading
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by using selective etch masks that provide different etch resistance properties in different regions of the pattern, allowing high-density areas to be etched with controlled loading effects while maintaining precision feature size control

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs preliminary actions by pre-treating the substrate and applying protective coatings before etching to reduce dry etch loading effects, enabling precise patterning of small features without the harmful accumulation of etch byproducts

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If conventional patterning methods are used, then manufacturing process is simple, but inadvertent damage to layers occurs

Engineering Contradiction:
Improvepatterning process simplicityVSAvoidlayer damage
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent introduces intermediary protective layers and sacrificial materials that mediate between the patterning process and the underlying sensitive layers, preventing inadvertent damage while maintaining process simplicity through straightforward deposition and removal steps

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies beforehand cushioning by depositing protective coatings and buffer layers prior to patterning operations, which cushion and absorb the mechanical and chemical stresses that would otherwise cause damage to underlying layers during conventional patterning processes

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise and reliable patterning with improved packing density, tighter tolerances, and reduced damage to underlying structures, facilitating the formation of conductive vias and interconnects with vertical sidewalls and enhanced reliability.

Implementation Method 1

a photo-sensitive material that changes its properties upon exposure to specific light wavelengths

Methodology Applied
Scientific EffectPhoto-sensitive material response: Photopolymerisation

Data Source

PatentUS12387974B2Patterning interconnects and other structures by photo-sensitizing method
Publication Date: 2025.08.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12387974B2 patent drawing
  • US12387974B2 patent drawing
  • US12387974B2 patent drawing

AI summary

A representative method includes forming a photo-sensitive material over a substrate, and forming a cap layer over the photo-sensitive material, and patterning the cap layer. Using the patterned cap layer, a first portion of the photo-sensitive material is selectively exposed to a pre-selected light wavelength to change at least one material property of the first portion of the photo-sensitive material, while preventing a second portion of the photo-sensitive material from being exposed to the pre-selected light wavelength. One, but not both of the following steps is then conducted: removing the first portion of the photo-sensitive material and forming in its place a conductive element at least partially surrounded by the second portion of the photo-sensitive material, or removing the second portion of the photo-sensitive material and forming from the first portion of the photo-sensitive material a conductive element electrically connecting two or more portions of a circuit.