Photosensitive Detection Layer Layout for Flatness and Fill Factor

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Solution Overview

Problem

The configuration of a film layer in detection devices with switch elements results in uneven surfaces, making it difficult to position photosensitive elements effectively, leading to low fill factors and increased susceptibility to hydrogen ion diffusion, which reduces device reliability.

Innovation Solution

Incorporating a planarization layer between the photosensitive element and the switch element to enhance surface flatness, allowing for increased overlap and higher fill factors, and using a shared conductor layer for the switch element's gate, source, and drain to simplify manufacturing and reduce hydrogen ion diffusion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a film layer is configured in the switch element, then the switch element can be formed, but the surface becomes uneven making it difficult to dispose the photosensitive element above, resulting in a low fill factor

Engineering Contradiction:
Improveswitch element formationVSAvoidsurface flatness
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

A planarization layer is introduced as an intermediary between the switch element and the photosensitive element. This planarization layer fills in the surface unevenness caused by the film layer configuration in the switch element, creating a flat surface that allows the photosensitive element to be properly disposed above with high fill factor.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If a metal layer is configured in the switch element, then the switch element can be formed, but hydrogen ions generated during insulating layer formation can diffuse into the semiconductor, reducing reliability

Engineering Contradiction:
Improveswitch element formationVSAvoidhydrogen ion diffusion
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The planarization layer serves as a barrier layer that prevents hydrogen ions generated during the chemical vapor deposition process from diffusing into the semiconductor of the switch element. This intermediary layer blocks the harmful hydrogen ion diffusion path while allowing the manufacturing process to proceed normally.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The planarization layer is formed beforehand to create a protective barrier that cushions against future hydrogen ion diffusion. By establishing this protective layer before the insulating layer formation process, the semiconductor is pre-protected from hydrogen ion contamination.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Device complexity

If the photosensitive element is disposed above the switch element, then the detection device can be formed, but the uneven surface causes the photosensitive element to have a low fill factor

Engineering Contradiction:
Improvedetection device structureVSAvoidphotosensitive element fill factor
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The planarization layer acts as a mediator between the switch element and the photosensitive element, providing a flat surface that enables the photosensitive element to achieve high fill factor while maintaining the required device structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

4Device complexity

If the first semiconductor of the photosensitive element overlaps with the second semiconductor of the switch element, then the detection device can be formed, but the manufacturing process becomes more complex and costly

Engineering Contradiction:
Improvesemiconductor overlap configurationVSAvoidmanufacturing process complexity
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The design intentionally creates an asymmetric arrangement where the first semiconductor of the photosensitive element does not overlap with the second semiconductor of the switch element. This asymmetric configuration simplifies the manufacturing process by avoiding the need for precise alignment and complex processing steps required for overlapping semiconductors.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves the fill factor of the photosensitive element, enhancing its photoelectric conversion efficiency and increases the reliability of the detection device by reducing hydrogen ion diffusion and simplifying the manufacturing process.

Implementation Method 1

a planarization layer is disposed between the bottom electrode and the switch element... using the planarization layer with higher flatness to increase the surface area of the photosensitive element

Methodology Applied
Scientific EffectPlanarization:

Implementation Method 2

increasing the fill factor of the photosensitive element, improving its surface area and photoelectric conversion efficiency

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 3

The bottom electrode is coupled to the switch element

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20240304733A1Detection device
Publication Date: 2024.09.12 INNOCARE OPTOELECTRONICS CORP
  • US20240304733A1 patent drawing
  • US20240304733A1 patent drawing
  • US20240304733A1 patent drawing

AI summary

A detection device, including a substrate, a switch element, a photosensitive element, and a planarization layer, is provided. The switch element is disposed on the substrate. The photosensitive element includes a bottom electrode, a top electrode, and a first semiconductor disposed between the bottom electrode and the top electrode. The planarization layer is disposed between the bottom electrode and the switch element. The bottom electrode is coupled to the switch element.