Photosensitive Resin Multilayer Film for Cleaner Resist Patterning
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Solution Overview
Problem
Existing photosensitive resin compositions fail to adequately address issues of stripped piece dissolution and under-plating during the formation of resist patterns and semiconductor bumps, which are critical for miniaturized and high-density wiring in printed circuit boards.
Innovation Solution
A photosensitive resin multilayer film comprising specific components in defined ratios, including an alkali-soluble polymer, ethylenically unsaturated double bond compounds, and a photopolymerization initiator, with a thickness and absorbance relationship optimized to improve stripped piece dissolution and under-plating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photosensitive resin compositions are used, then the basic photolithography process can be performed, but stripped piece dissolution and under-plating problems occur that compromise pattern quality
Solution Approach 1:
The patent changes the chemical composition parameters of the photosensitive resin by incorporating specific additives including carboxylic acid compounds, sulfonic acid compounds, and their derivatives. These compositional changes modify the dissolution behavior of stripped pieces and prevent under-plating, thereby improving pattern quality while eliminating harmful effects
Solution Approach 2:
The patent introduces acid-generating compounds and base-generating compounds as intermediary substances that mediate between the photopolymerization process and the dissolution process. These intermediaries control the local pH environment during development and stripping, preventing both stripped piece dissolution and under-plating by regulating chemical interactions
2Manufacturing precision
If the photosensitive resin composition is optimized for basic patterning, then lithography can proceed, but resist foot formation occurs that degrades pattern precision
Solution Approach 1:
The patent modifies the chemical parameters of the resin system by adding specific carboxylic acid compounds and sulfonic acid compounds that alter the dissolution kinetics. These parameter changes prevent resist foot formation by controlling the dissolution rate and uniformity, thereby maintaining precise line width control
Solution Approach 2:
The patent incorporates compounds that generate acids or bases upon exposure as preliminary actions. These pre-installed chemical agents activate during photolithography to preemptively control the dissolution behavior, preventing resist foot formation before it can occur during the development process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces resist foot formation and under-plating, enhancing the quality of resist patterns and semiconductor bumps, thereby supporting advanced wiring technologies.
Implementation Method 1
a photopolymerization initiator (C): 0.01% by weight to 20% by weight
Data Source
AI summary
The present invention provides a photosensitive resin multilayer body which is obtained by superposing, on a supporting film, a photosensitive resin layer containing a photosensitive resin composition that contains from 10% by mass to 90% by mass of (A) an alkali-soluble polymer, from 5% by mass to 70% by mass of (B) a compound having an ethylenically unsaturated double bond and from 0.01% by mass to 20% by mass of (C) a photopolymerization initiator; the alkali-soluble polymer (A) contains a copolymer which contains, as a copolymerization component, a (meth)acrylate that has an alkyl group having from 3 to 12 carbon atoms; an acrylate monomer is contained, as the compound (B) having an ethylenically unsaturated double bond, in an amount of from 51% by mass to 100% by mass relative to the total amount of the compound (B) having an ethylenically unsaturated double bond; the absorbance A of the photosensitive resin layer containing the photosensitive resin composition at a wavelength of 365 nm, said photosensitive resin layer having a film thickness T (μm), satisfies the relational expression 0<A/T≤0.007; and the film thickness of the photosensitive resin layer containing the photosensitive resin composition is from 40 μm to 600 μm.