Photosensitive Resin Composition for 350-440 nm Light
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional photosensitive elements exhibit low sensitivity and resolution when exposed to light with a peak wavelength range of 350 nm to 440 nm, making it difficult to form satisfactory resist patterns in printed circuit board and plasma display panel production processes.
Innovation Solution
A photosensitive resin composition containing a binder polymer, a photopolymerizing compound with a polymerizable ethylenic unsaturated bond, a photoradical polymerization initiator, and a compound with a specific formula that enhances optical absorption in the 350 nm to 440 nm wavelength range, allowing for improved sensitivity and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional photosensitive elements are used with light sources having peak wavelength 350 nm to 440 nm, then worker safety is improved (avoiding harmful UV), but sensitivity and resolution deteriorate
Solution Approach 1:
The patent changes the optical absorption parameters of the photosensitive resin composition by incorporating specific compounds (compounds (D1) and (D2) with defined molecular structures) that absorb light in the 350-440 nm range. This allows the use of safer visible light sources while maintaining high sensitivity and resolution for resist pattern formation.
Solution Approach 2:
The patent creates a composite photosensitive resin composition containing multiple components: binder polymer (A), photopolymerizing compound (B), photoradical polymerization initiator (C), and specific light-absorbing compounds (D). This composite structure enables simultaneous achievement of safety (using visible light) and performance (high sensitivity and resolution).
2Ease of manufacture
If conventional photosensitive resin compositions are used, then manufacturing process is simple, but sensitivity and resolution for 350-440 nm light are insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the photosensitive resin by incorporating specific compounds (D1) and (D2) with defined molecular structures and absorption characteristics. This enables the resin to respond effectively to 350-440 nm light while maintaining standard manufacturing processes.
Solution Approach 2:
The compounds (D1) and (D2) act as intermediaries that absorb the 350-440 nm light and transfer energy to initiate polymerization of the photopolymerizing compound (B). This intermediary mechanism enables effective resist pattern formation with visible light sources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The photosensitive resin composition enables the formation of resist patterns with sufficient sensitivity and resolution when exposed to light in the 350 nm to 440 nm range, enhancing the throughput and quality of resist patterns in printed circuit board and plasma display panel production processes.
Implementation Method 1
irradiated with active light rays for photocuring (pattern exposure) of prescribed sections of the photosensitive resin composition
Implementation Method 2
a compound with a specific formula that enhances optical absorption in the 350 nm to 440 nm wavelength range
Data Source
AI summary
A photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizing compound with a polymerizable ethylenic unsaturated bond, (C) a photoradical polymerization initiator containing a 2,4,5-triarylimidazole dimer or its derivative, and (D) a compound represented by the following general formula (1)(wherein R1 and R2 each independently represent C1-20 alkyl, etc., and R3, R4, R5, R6, R7, R8, R9 and R10 each independently represent hydrogen, etc.).