Pi-orbital Semiconductor Quantum Cell for Nuclear Batteries
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Solution Overview
Problem
Current nuclear batteries have low nuclear energy to electric energy conversion efficiency, ranging from 0.1-5% for thermal converters and 6-8% for non-thermal converters, limiting their effectiveness.
Innovation Solution
A quantum cell structure is developed, comprising an N-type ohmic contact electrode, an N-type π-orbital semiconductor substrate, an N-type π-orbital semiconductor epitaxy layer, a SiO2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer, with the π-orbital semiconductor substrate and epitaxy layer formed using an organic semiconductor material with aromatic groups or carbon-carbon bonds and doped with a cationic complex to enhance carrier concentration and depletion region width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional semiconductor materials (Si, Ge) are used in nuclear batteries, then the device structure is simple and manufacturing is easier, but the nuclear energy to electric energy conversion efficiency is low (0.1-5% for thermal converters, 6-8% for non-thermal converters)
Solution Approach 1:
The patent changes the fundamental material parameter from traditional Si/Ge semiconductors to π-orbital semiconductors with aromatic groups or carbon-carbon bonds. This material parameter change enables higher carrier concentration and improved energy conversion efficiency (10-30%) while maintaining the basic device structure and manufacturing process simplicity
Solution Approach 2:
The patent uses composite material structure by combining π-orbital semiconductor materials with specific doping agents (cationic complexes). This composite approach creates an epitaxy layer with optimized carrier concentration and depletion region width, achieving enhanced conversion efficiency without complicating the overall device architecture
2Reliability
If doping concentration in the epitaxy layer is increased to improve carrier concentration, then electric conductivity improves, but the depletion region width decreases
Solution Approach 1:
The patent optimizes the doping concentration parameter to a specific range (1×10^13-5×10^14 cm^-3) that balances carrier concentration and depletion region width. This parameter optimization ensures sufficient electric conductivity while maintaining an adequate depletion region for effective charge separation and collection in the nuclear battery device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The quantum cell achieves a nuclear energy to electric energy conversion efficiency of 10-30%, with improved open-circuit voltage and overall performance, offering a 50-1,000 times greater performance ratio compared to traditional lithium batteries and a longer operating life of 5-100 years.
Implementation Method 1
When the radioisotope decays, one neuton in the nucleus changes into one proton with one electron released. Such reaction can release energy in the form of thermal energy or radiant energy
Implementation Method 2
In a thermal converter, thermoelectric effect or photoelectric effect occurs to generate electric energy by using a radioisotope which can generate energy massively
Implementation Method 3
In a thermal converter, thermoelectric effect or photoelectric effect occurs to generate electric energy by using a radioisotope which can generate energy massively
Implementation Method 4
Taking a β particle as an example, this high energy electron beam enters a trapping layer via an electron channel. At this moment, an electron in a semiconductor material is excited into an excited state by the particle to form an electron hole and thus obtain a voltage
Implementation Method 5
Since this mechanism is similar to the photovoltaic effect, this type of nuclear battery using the decay as the energy source is also referred to as betavoltaic cell
Data Source
AI summary
Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type π-orbital semiconductor substrate, an N-type π-orbital semiconductor epitaxy layer, a SiO2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type π-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type π-orbital semiconductor epitaxy layer has a doping concentration of 1×1013-5×1014 cm−3 and is formed by injection of a cationic complex in a dose of 6×1013-1×1015 cm−3.