Piecewise Linear Temperature Sensor with Trim Codes
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Solution Overview
Problem
Integrated circuits, particularly memory devices, face challenges in accurately sensing temperature variations, which affect the operation of circuit components, leading to inefficiencies in adjusting operating parameters such as voltages, due to existing temperature sensing technologies that are not robust against manufacturing process variations.
Innovation Solution
An integrated circuit with a temperature sensing component that generates a temperature-dependent voltage and temperature reference voltages, using a comparator circuit to determine the operating temperature, and trim codes to calibrate and compensate for process variations, ensuring accurate temperature measurement and adjustment of operating parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional temperature sensing technologies are used in integrated circuits, then temperature sensing is provided, but the sensing accuracy deteriorates due to manufacturing process variations
Solution Approach 1:
The patent changes the physical parameter used for temperature sensing from conventional methods to a bandgap voltage-based approach. The temperature-dependent voltage is generated using the bandgap voltage of a bipolar junction transistor, which has a well-defined temperature coefficient, enabling accurate temperature measurement while being robust against manufacturing variations through proper circuit design and calibration
Solution Approach 2:
The patent implements feedback mechanisms through comparator circuits that compare the temperature-dependent voltage with reference voltages. This feedback approach allows the system to compensate for manufacturing variations by adjusting operating parameters based on measured temperature, thereby maintaining sensing accuracy across different manufacturing processes
2Productivity
If temperature sensing is implemented to adjust operating parameters, then circuit performance improves, but device complexity increases
Solution Approach 1:
The patent merges the temperature sensing function with the existing circuit architecture by integrating the temperature-dependent voltage generation directly into the circuit. The same bipolar junction transistor used for normal circuit operation also serves as the temperature sensor, eliminating the need for separate dedicated sensing components and reducing overall device complexity
Solution Approach 2:
The patent makes the bipolar junction transistor multi-functional, using it both for its primary circuit function and for temperature sensing. The bandgap voltage generated by the transistor serves dual purposes: maintaining proper circuit operation and providing temperature information for parameter adjustment, thereby improving productivity without proportionally increasing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the impact of temperature variations on memory operations by providing precise temperature sensing and adaptive voltage adjustments, enhancing the stability and performance of integrated circuits across varying temperatures.
Implementation Method 1
a first voltage generator to generate a first voltage that varies with temperature
Data Source
AI summary
An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.