Piezoelectric Single Crystal Composition for High-Temperature Sensitivity

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Solution Overview

Problem

Piezoelectric single crystal devices exhibit poor piezoelectric properties at room temperature and have limited sensitivity within a specific high-temperature range of 50° C. to 70° C., necessitating improved compositions and structures to maintain high sensitivity across a wide temperature range.

Innovation Solution

A piezoelectric single crystal device with a composition of [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X) having a complex perovskite structure, where X is within the range of 0.26 to 0.29, and a molar ratio of Mg to Nb between 0.45 to 0.55, along with the addition of lead indium niobate and calcium substitution, to enhance specific inductive capacity and maintain sensitivity across varying temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the compositional ratio X is optimized for high-temperature performance, then specific inductive capacity at transformation temperature reaches 20,000 or more, but the composition becomes restricted to a narrow range of 0.26 to 0.29

Engineering Contradiction:
Improvespecific inductive capacity at transformation temperatureVSAvoidcompositional ratio control precision
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent defines specific parameter ranges (X: 0.26-0.29, Mg:Nb ratio: 0.45-0.55) that balance performance optimization with manufacturing feasibility. These ranges are wide enough to accommodate normal compositional variations during crystal growth while ensuring the phase transition temperature Trt falls within the desired 50-70°C range, thereby achieving high specific inductive capacity (20,000 or more) without requiring excessively tight compositional control.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes a composite material system combining lead magnesium niobate (PMN) and lead titanate (PT) in a specific ratio to create a solid solution with tailored properties. This composite approach allows the material to exhibit both high piezoelectric response at elevated temperatures and sufficient stability at room temperature, resolving the contradiction between performance optimization and compositional flexibility.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device achieves a significant increase in specific inductive capacity at high temperatures, maintaining high sensitivity from room temperature to 50° C. to 70° C., with specific inductive capacities at 25° C. being 5,000 or more and at transformation temperatures being 20,000 or more, ensuring stable and highly sensitive piezoelectric properties.

Implementation Method 1

A piezoelectric single crystal device makes the conversion between electric energy and mechanical energy possible

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

transformation temperature between a pseudocubic system and a tetragonal system

Methodology Applied
Scientific EffectPhase transition: Phase Change

Data Source

PatentUS7402938B2Piezoelectric single crystal device
Publication Date: 2008.07.22 JFE MINERAL CO LTD
  • US7402938B2 patent drawing
  • US7402938B2 patent drawing
  • US7402938B2 patent drawing

AI summary

A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt−20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.