Thin Film Piezoelectric Element with Multi-Phase Stack for Large Stroke

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Solution Overview

Problem

Conventional thin film piezoelectric elements have inadequate piezoelectric constants and coercive field strength, limiting their stroke and reliability in actuator and sensor applications, particularly in disk drive units, due to single-phase structures that are prone to depolarization at high field strengths.

Innovation Solution

A thin film piezoelectric element with a piezoelectric thin film stack comprising a top and bottom electrode layer sandwiching a piezoelectric layer with different phase structures, such as rhombohedra and tetragonal phases, or compositions at the morphotropic phase boundary, to enhance coercive field strength and thermal stability, allowing larger applied field strengths without depolarization and achieving a larger stroke.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a single-phase piezoelectric layer is used, then the manufacturing process is simple, but the piezoelectric constants are inadequate and the coercive field strength is limited

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidpiezoelectric constants and coercive field strength
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent employs a composite piezoelectric layer comprising multiple phases (tetragonal phase and rhombohedral phase) with different compositions. This composite structure combines the advantages of each phase to achieve both high piezoelectric constants and enhanced coercive field strength, resolving the contradiction between manufacturing simplicity and performance reliability

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent creates local quality variations by forming different piezoelectric phases with specific compositions (e.g., Pb(Zr1-xTix)O3 with different x values) within the same layer. This allows different regions to contribute different properties, achieving high piezoelectric constants in some regions while maintaining high coercive field strength in others

Inventive Principle:
Principle #3Local quality

2Length of moving object

If the applied field strength is increased beyond the coercive field strength, then the stroke can be larger, but depolarization occurs reducing reliability

Engineering Contradiction:
ImprovestrokeVSAvoiddepolarization resistance
Core Design Contradiction:
Length of moving objectVSReliability

Solution Approach 1:

The patent changes the material parameters by incorporating multiple piezoelectric phases with different coercive field strengths. This creates a distribution of coercive fields that allows the element to withstand higher applied field strengths without complete depolarization, enabling larger stroke while maintaining reliability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The multi-phase structure acts as a cushioning mechanism against depolarization. When the applied field exceeds the coercive field of one phase, the other phases with different coercive characteristics provide resistance, preventing sudden complete depolarization and allowing larger field excursions

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Strength

If the PZT thickness is increased to enable larger applied field strength, then the field strength can be increased, but the cost rises

Engineering Contradiction:
Improveapplied field strengthVSAvoidmaterial cost
Core Design Contradiction:
StrengthVSQuantity of substance

Solution Approach 1:

Instead of increasing thickness, the patent changes the compositional parameters by incorporating multiple phases with different coercive characteristics. This allows achieving higher applied field strength capability through material composition optimization rather than geometric scaling, avoiding the cost increase associated with thicker materials

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly increases piezoelectric constants d31 and d33, enables larger applied field strengths without depolarization, and provides good thermal stability, enabling larger strokes and improved performance in devices like micro-actuators and disk drive units.

Implementation Method 1

Piezoelectric material is processed into various piezoelectric elements in accordance with different purposes, particularly, it has been widely used for functional electronic components such as an actuator for generating deformation by applying voltage

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

or a sensor for generating voltage from the deformation of elements in a reverse way

Methodology Applied
Scientific EffectReverse piezoelectric effect: Converse Piezoelectric Effect

Data Source

PatentUS9450171B2Thin film piezoelectric element and manufacturing method thereof, micro-actuator, head gimbal assembly and disk drive unit with the same
Publication Date: 2016.09.20 SAE MAGNETICS (HK) LTD
  • US9450171B2 patent drawing
  • US9450171B2 patent drawing
  • US9450171B2 patent drawing

AI summary

A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.