Piezo-resistive Sensor Shield with Multi-potential Segmentation
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Solution Overview
Problem
In semiconductor devices with piezo-resistive portions, the potential difference between the piezo-resistive portions and shield films varies, affecting resistance values and temperature characteristics, leading to inefficiencies in signal output due to the shield film being fixed at a constant potential.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with piezo-resistive portions and a conductive shield film separated by an insulating film, where the shield film is connected to different potentials to match the potential differences in the piezo-resistive portions, reducing variations in resistance and temperature characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the shield film is fixed at a constant potential, then the electrical charge effect on the piezo-resistive portion is mitigated, but the potential difference between the piezo-resistive portion and shield film varies with position, affecting resistance value and temperature characteristics
Solution Approach 1:
The shield film potential is changed from static (constant) to dynamic (position-dependent). By connecting the shield film to multiple potentials corresponding to different regions of the piezo-resistive portion, the shield film potential varies dynamically across its surface, matching the potential distribution of the piezo-resistive portion and eliminating potential differences that affect resistance stability
Solution Approach 2:
Different regions of the shield film are assigned different potentials to match the local potential characteristics of the piezo-resistive portion. This local matching ensures that each region of the shield film compensates for electrical charge effects specific to its corresponding piezo-resistive region, thereby stabilizing resistance values across the entire structure
2Device complexity
If the shield film is fixed at a constant reference potential, then the shield structure is simple, but the potential difference between piezo-resistive portions at different positions and the shield film affects measurement precision
Solution Approach 1:
The shield film potential configuration transitions from a simple constant potential to a multi-potential dynamic configuration. This dynamic setup allows the shield film to adapt to the potential distribution of the piezo-resistive portion, thereby improving measurement precision without significantly complicating the overall device structure
Solution Approach 2:
The shield film is configured to maintain equipotential regions that match the piezo-resistive portion's potential distribution. By creating corresponding equipotential zones, the potential difference between the piezo-resistive portion and shield film is minimized, reducing interference with measurement precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the potential difference between the shield film and piezo-resistive portions, stabilizing resistance values and temperature characteristics, enhancing the accuracy of signal output and sensitivity of the semiconductor device.
Implementation Method 1
a piezo-resistive portion is placed on a diaphragm formed in a silicon substrate. The resistance value of the piezo-resistive portion varies due to the diaphragm being distorted.
Implementation Method 2
By placing a shield film above the piezo-resistive portion with an insulating film intervening therebetween, the effect of electrical charge on the piezo-resistive portion is mitigated.
Data Source
AI summary
The potential difference between a piezo-resistive portion and a shield film is to be reduced. A semiconductor device is provided, including: a semiconductor substrate having provided therein a hollowed portion, a piezo-resistive portion provided in a region of the semiconductor substrate above the hollowed portion; an insulating film provided above the piezo-resistive portion; and a conductive shield film provided above the piezo-resistive portion with the insulating film intervening therebetween, wherein two different parts of the shield film are connected to different potentials. In this manner, the potential difference between a piezo-resistive portion and a shield film can be reduced.