Piezoelectric Bonded Body with Amorphous Interface for Stable Bonding
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Solution Overview
Problem
It is challenging to bond a piezoelectric material substrate strongly and stably onto a supporting substrate composed of a metal oxide using a silicon oxide bonding layer with a low oxygen ratio, as separation may occur during processing such as polishing.
Innovation Solution
A bonded body is created with a supporting substrate of metal oxide, a piezoelectric material substrate, and a bonding layer composed of Si(1-x)Ox (0.008≤x≤0.408) with an amorphous layer between the bonding layer and the supporting substrate, where the oxygen ratio of the amorphous layer is higher than that of the supporting substrate, enhancing the bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide bonding layer with low oxygen ratio is used, then the insulation property is improved, but the bonding strength deteriorates causing separation during processing
Solution Approach 1:
The bonding structure is divided into multiple layers: a lower silicon oxide layer (SiOx where 0.008≤x≤0.408) providing insulation, and an upper silicon oxide layer (SiOy where 1.9≤y≤2.1) providing bonding strength. This segmentation allows each layer to fulfill its specific function without compromise.
Solution Approach 2:
The bonding structure uses a composite of two different silicon oxide materials with distinct oxygen ratios. The lower layer has low oxygen ratio for insulation, while the upper layer has high oxygen ratio for strong bonding, creating a composite structure that combines both properties.
2Reliability
If a silicon oxide bonding layer with low oxygen ratio is used, then the electrical resistance is improved, but the bonding stability deteriorates
Solution Approach 1:
The bonding structure is segmented into functional layers: the lower silicon oxide layer (SiOx) provides electrical resistance, while the upper silicon oxide layer (SiOy) ensures bonding stability. This functional segmentation resolves the contradiction between electrical performance and bonding stability.
Solution Approach 2:
A composite bonding structure is formed using two silicon oxide materials with different oxygen ratios. The low-oxygen silicon oxide provides electrical resistance, while the high-oxygen silicon oxide provides bonding stability, achieving both requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the bonding strength between the piezoelectric and supporting substrates, preventing separation during processing, and enhances the insulation properties of the bonding layer.
Implementation Method 1
a bonding layer provided between the supporting substrate and the piezoelectric material substrate, the bonding layer having a composition of Si(1-x)Ox (0.008≤x≤0.408); and an amorphous layer provided between the bonding layer and the supporting substrate, wherein an oxygen ratio of the amorphous layer is higher than an oxygen ratio of the supporting substrate
Implementation Method 2
the composition of the bonding layer is made silicon oxide having a lower oxygen ratio to form the bonding layer with the improved insulation property
Data Source
AI summary
A bonded body includes a supporting substrate composed of a metal oxide, a piezoelectric material substrate, a bonding layer provided between the supporting substrate and piezoelectric material substrate and having a composition of Si(1-x)Ox (0.008≤x≤0.408), and an amorphous layer provided between the bonding layer and supporting substrate. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the supporting substrate.