Piezoelectric Device Diffusion Barrier Layer for Delamination Prevention

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Solution Overview

Problem

During the manufacturing of piezoelectric devices with multiple layers, delamination can occur due to the diffusion of lead (Pb) and lead oxide (PbOx) between the piezoelectric layers and the electrodes, leading to device failures and reduced processing yield.

Innovation Solution

Incorporating a diffusion barrier layer in the piezoelectric device to trap and block the diffusion of lead (Pb) and lead oxide (PbOx) during the sol-gel process, thereby reducing the likelihood of delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple piezoelectric layers are deposited during manufacturing, then device functionality is improved, but delamination occurs due to lead diffusion between layers

Engineering Contradiction:
Improvedevice functionalityVSAvoiddelamination resistance
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

A diffusion barrier layer is introduced as an intermediary between the first and second piezoelectric layers. This barrier layer specifically blocks the diffusion of lead (Pb) and lead oxide (PbOx) from the second layer to the first layer during the sol-gel process, preventing delamination while allowing both layers to maintain their piezoelectric functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrode structure is segmented into multiple portions (first portion, second portion, third portion) with the diffusion barrier layer positioned between specific segments. This segmentation allows the barrier to be strategically placed only where lead diffusion occurs, without interfering with the overall piezoelectric device operation.

Inventive Principle:
Principle #1Segmentation

2Productivity

If diffusion barrier layer is added to prevent delamination, then processing yield is improved, but device complexity increases

Engineering Contradiction:
Improveprocessing yieldVSAvoidlayer structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The diffusion barrier layer is applied locally only between specific piezoelectric layers where lead diffusion is a problem, rather than throughout the entire device structure. This localized approach prevents delamination and improves yield without unnecessarily complicating the entire device architecture.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The barrier layer serves as a thin intermediary that resolves the delamination issue with minimal added complexity. By confining the barrier to specific interfaces where it is needed, the overall device complexity increase is minimized while achieving the yield improvement.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of a diffusion barrier layer effectively prevents delamination, increases the processing yield of piezoelectric devices, and reduces the consumption of semiconductor processing resources.

Implementation Method 1

diffusion of lead (Pb) and lead oxide (PbOx) from the second piezoelectric layer to the first piezoelectric layer

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

When a voltage is applied between the first electrode and the second electrode, an electrical field is generated by the applied voltage. The electric field causes the piezoelectric layer to stretch and/or compress

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentUS20250072292A1Piezoelectric device and methods of formation
Publication Date: 2025.02.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250072292A1 patent drawing
  • US20250072292A1 patent drawing
  • US20250072292A1 patent drawing

AI summary

A diffusion barrier layer is included in a piezoelectric device that includes a plurality of piezoelectric layers. The diffusion barrier layer may be included to trap and/or block lead (Pb) and/or lead oxide (PbOx) from diffusing toward a first piezoelectric layer that occurs during a sol-gel process that used to form a second piezoelectric layer after the first piezoelectric layer formed. Blocking and/or trapping the diffusion of lead (Pb) and/or lead oxide (PbOx) using the diffusion barrier layer may reduce the likelihood of and/or prevent delamination in the piezoelectric device.