Piezoelectric Element Crystal Orientation for Inkjet Head Displacement
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Solution Overview
Problem
Existing piezoelectric elements, such as those used in inkjet recording heads, face challenges in measuring and defining the displacement characteristics due to unknown deviations of B-site atoms, which affect the performance of the piezoelectric layers.
Innovation Solution
A piezoelectric element configuration with a lower electrode, a piezoelectric layer, and an upper electrode, where the half-value width of the (100) planes is not larger than 0.2 degrees and the half-value width of the (200) planes is not smaller than 0.25 degrees, allowing for precise measurement of B-site atom deviation and enhancing displacement characteristics, using a piezoelectric layer made of lead-zirconate-titanate (PZT) with a thickness not smaller than 300 nm to prevent substrate restraint and ensure accurate measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the half-value width of the (100) planes is measured to define piezoelectric layer quality, then manufacturing consistency is improved, but the ability to measure B-site atom deviation and predict displacement characteristics deteriorates
Solution Approach 1:
The patent changes the measurement parameter from half-value width of (100) planes to half-value width of (200) planes. This parameter change enables simultaneous achievement of manufacturing consistency and B-site atom deviation measurement, as the (200) planes provide information about both crystal orientation and B-site atom positioning in the perovskite structure.
2Device complexity
If the piezoelectric layer thickness is reduced to improve device integration, then device complexity is reduced, but measurement accuracy of crystal structure deteriorates due to substrate restraint
Solution Approach 1:
The patent specifies a minimum thickness of 300 nm for the piezoelectric layer, which is sufficient to overcome substrate restraint effects and enable accurate crystal structure measurement, while still being thin enough for device integration. This thickness specification balances measurement accuracy requirements with device integration needs.
3Measurement precision
If the piezoelectric layer thickness is increased to improve measurement accuracy, then crystal structure measurement precision is improved, but device size and complexity increase
Solution Approach 1:
The patent establishes an optimal thickness range (not smaller than 300 nm) that provides sufficient measurement accuracy while maintaining device integration feasibility. This parameter optimization avoids both substrate restraint effects at thin dimensions and excessive device complexity at thick dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the precise measurement of B-site atom deviation, resulting in excellent displacement characteristics and improved performance of piezoelectric elements, actuator devices, and liquid-jet heads by ensuring larger strain with smaller drive voltage, thus enhancing the overall liquid-jet characteristics.
Implementation Method 1
The vibration plate is distorted by piezoelectric elements, and thus ink in each of the pressure generating chambers is pressurized
Implementation Method 2
when the face surface of the piezoelectric layer is measured by means of the wide-angled X-ray diffraction method
Implementation Method 3
the half-value width of the (100) planes is not larger than 0.2 degrees, and the half-value width of the (200) planes is not smaller than 0.25 degrees
Data Source
AI summary
Provided are an a piezoelectric element, an actuator device, a liquid-jet head and a liquid-jet apparatus which exhibit excellent displacement characteristics; the piezoelectric element is configured of a lower electrode, a piezoelectric layer and an upper electrode; and the half-value width of the (100) planes is not larger than 0.2 degrees, and the half-value width of the (200) planes is not smaller than 0.25 degrees, when the face surface of the piezoelectric layer is measured by means of the wide-angle X-ray diffraction method.