Piezoelectric Bonded Body Interface for Strong Sialon Joining
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Solution Overview
Problem
Bonding a piezoelectric material layer composed of lithium niobate or lithium tantalate onto a supporting substrate composed of sialon is challenging due to low bonding strength, leading to issues during polishing and potential fine separation.
Innovation Solution
A bonded body is created with a supporting substrate of sialon and a piezoelectric material layer containing LiAO3, featuring an interface layer and a supporting substrate-side intermediate layer, both composed of nitrogen, oxygen, aluminum, silicon, and one or more elements selected from niobium and tantalum, facilitating strong and stable bonding through controlled atomic diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If direct bonding is attempted between piezoelectric material layer and sialon substrate, then bonding process is simplified, but bonding strength is insufficient leading to peeling during polishing
Solution Approach 1:
An intermediate layer comprising nitrogen, oxygen, aluminum, silicon, and one or more elements selected from niobium and tantalum is introduced between the piezoelectric material layer and the sialon substrate. This intermediate layer acts as a mediator that enhances atomic diffusion and chemical bonding, thereby achieving strong and stable bonding without compromising process simplicity.
2Manufacturing precision
If piezoelectric material layer is thinned by polishing, then device performance is improved, but fine separation occurs if bonding strength is low
Solution Approach 1:
The intermediate layer is formed beforehand to provide a buffer zone that prevents fine separation during subsequent polishing operations. This layer compensates for potential bonding weaknesses by creating a gradient in material properties that distributes stress and prevents delamination during mechanical processing.
3Strength
If adhesive layers are used for bonding, then bonding strength is improved, but device structure becomes more complex and reliability decreases
Solution Approach 1:
The mechanical adhesive bonding approach is replaced with atomic-level chemical bonding facilitated by the intermediate layer. This substitution eliminates the need for separate adhesive materials and creates a more reliable, integrated bond structure where the intermediate layer becomes an intrinsic part of the bonding interface rather than a separate component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables strong and stable bonding of the piezoelectric material layer to the sialon substrate, enhancing bonding strength and preventing peeling during polishing processes, as demonstrated by improved atomic ratios and bonding strength measurements.
Implementation Method 1
both composed of nitrogen, oxygen, aluminum, silicon, and one or more elements selected from niobium and tantalum, facilitating strong and stable bonding through controlled atomic diffusion
Data Source
AI summary
A bonded body includes a supporting substrate and piezoelectric material layer. The supporting substrate is composed of sialon. The material of the piezoelectric material layer is LiAO3 (A represents one or more element selected from the group consisting of niobium and tantalum). It is included an interface layer present along an interface between the supporting body and piezoelectric material layer and a supporting substrate-side intermediate layer present between the interface layer and supporting substrate. Each of the interface layer and supporting substrate-side intermediate layer contains nitrogen, oxygen, aluminum, silicon and one or more element selected from the group consisting of niobium and tantalum as main components.