Piezoelectric Superconductor Switches for Non-Thermal State Change

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Solution Overview

Problem

Existing superconducting switch devices face inefficiencies in switching operations due to thermal transitions, which can lead to latching issues, reduced speed, and higher power consumption.

Innovation Solution

The development of superconducting switch devices that utilize a non-thermal phase transition from a superconducting state to an insulating state, facilitated by a lattice strain applied via a coupled piezoelectric component.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a thermal transition to a non-superconducting conductive state is used for switching, then the switch can operate in a conductive state, but the operation speed is limited and power consumption increases

Engineering Contradiction:

Improveswitching speedVSAvoidpower consumption

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies parameter changes by transitioning the superconductor from a thermal transition mechanism to a non-thermal transition mechanism. Specifically, the superconductor layer is subjected to strain (mechanical parameter change) via the piezoelectric layer, which induces a transition from superconducting state to insulating state without thermal heating, thereby achieving faster switching speeds and lower power consumption

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transitions by employing a non-thermal phase transition from superconducting state to insulating state. The piezoelectric layer induces strain that triggers this phase transition, allowing the switch to operate between superconducting (on-state) and insulating (off-state) without going through a thermal conduction phase, thus improving speed and reducing power consumption

Inventive Principle:

Principle #36Phase transitions

2Reliability

If a thermal transition is used to switch from superconducting state, then the switch can change state, but latching occurs and reduces switching efficiency

Engineering Contradiction:

Improveswitching reliabilityVSAvoidlatching issues

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent replaces the thermal-mechanical switching mechanism with a direct mechanical-strain mechanism. The piezoelectric layer converts electrical signals directly into mechanical strain on the superconductor layer, bypassing thermal processes that cause latching. This substitution eliminates the latching effect and improves switching reliability

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The piezoelectric layer serves as an intermediary between the electrical control signal and the superconductor layer. It converts the electrical signal into mechanical strain that directly controls the superconducting-to-insulating transition, preventing the thermal latching effects that occur in direct thermal transition mechanisms

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces latching of the switch, enables higher operational speeds, and lowers power consumption by leveraging a non-thermal transition mechanism.

Implementation Method 1

a piezoelectric layer positioned adjacent to the superconductor layer, the piezoelectric layer configured to apply the first strain to the superconductor layer in response to the first voltage

Methodology Applied

Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

a superconductor layer adapted to transition from a superconducting state to an insulating state in response to a first strain

Methodology Applied

Scientific EffectSuperconductor-to-insulator transition: Phase Change

Data Source

PatentUS12239029B2Superconductor-to-insulator devices

Publication Date: 2025.02.25 PSIQUANTUM CORP

AI summary

A device includes a superconductor layer and a piezoelectric layer positioned adjacent to the superconductor layer. The piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a predefined voltage threshold and to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the predefined voltage threshold. While the device is maintained below a superconducting threshold temperature for the superconductor layer and is supplied with current below a superconducting threshold current for the superconductor layer, the superconductor layer is configured to 1) operate in a superconducting state when the piezoelectric layer applies the first strain to the superconductor layer and 2) operate in an insulating state when the piezoelectric layer applies the second strain to the superconductor layer.