Semiconductor Pillar Array for Uniform Current Injection
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Solution Overview
Problem
Existing optoelectronic semiconductor components lack uniform energization capabilities, particularly for small-scale and high-resolution applications, as current methods for energizing semiconductor layers result in inaccurate and non-localized current distribution.
Innovation Solution
The development of an optoelectronic semiconductor component featuring semiconductor pillars with distinct emitter and contact pillars, where the contact pillars extend through an electrical isolation layer, allowing for uniform energization and precise electrical contacting of sub-micron structures, enabled by a metallic or transparent conductive outer layer that provides low resistance and high-density connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to energize semiconductor layers, then current distribution is achieved, but the energization is non-uniform and non-localized
Solution Approach 1:
The semiconductor component is divided into multiple discrete contact pillars, each serving as an independent current injection point. This segmentation allows localized energization of specific regions, enabling uniform current distribution across the semiconductor layer by distributing current through multiple controlled entry points rather than a single bulk connection.
Solution Approach 2:
Different regions of the semiconductor component are assigned different functional qualities: contact pillars provide electrical access points with specific geometric configurations optimized for current injection, while emitter pillars are designed for light emission. This local differentiation enables precise control over where current enters and how it distributes, achieving both high spatial resolution and uniformity.
2Manufacturing precision
If semiconductor pillars are made small for high-resolution applications, then spatial precision is improved, but electrical contacting becomes difficult
Solution Approach 1:
The contact pillars are designed with nested functional layers: a semiconductor core provides the structural foundation, while metallic outer layers are deposited around it to provide low-resistance electrical pathways. This nested structure allows the small semiconductor core to maintain its high spatial resolution while the surrounding metallic layers provide robust electrical contacting capability.
Solution Approach 2:
The contact pillars utilize composite material structures combining semiconductor materials (for structural integrity and small size) with highly conductive metallic materials (for low-resistance electrical contact). This composite approach enables the pillars to function effectively at sub-micron dimensions while maintaining excellent electrical properties for ease of contacting.
3Ease of operation
If contact pillars extend through the isolation layer, then surface-mountability is achieved, but device complexity increases
Solution Approach 1:
The contact pillars serve multiple functions simultaneously: they provide electrical contact points for current injection, extend through the isolation layer to enable surface mounting and external connectivity, and maintain structural support for the semiconductor structures. This multi-functionality reduces the need for separate components, thereby managing complexity while achieving surface-mountability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables uniform and spatially resolved energization of small semiconductor structures, facilitating precise electrical contacting and radiation generation, suitable for applications in industrial imaging, medical displays, and other sectors, with potential for high-resolution and efficient energy distribution.
Implementation Method 1
The contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer
Implementation Method 2
a first portion of the semiconductor pillars is designed as emitter pillars. These semiconductor pillars are designed to generate radiation
Data Source
AI summary
An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.