Gate Structure with Pillar for Transistor Device
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Solution Overview
Problem
Traditional replacement gate manufacturing techniques face challenges in precise placement and critical dimension control of gate cut openings in advanced integrated circuits, leading to difficulties in forming quality replacement gate structures and potentially resulting in decreased device performance or failure.
Innovation Solution
A novel gate structure with a multilayer gate-cut pillar structure is introduced, featuring a high-k gate insulation layer and a conductive gate, where a pillar structure is positioned above the gate, allowing for self-aligned cutting methods that relax the precision and size requirements of the gate cut opening, facilitating the formation of accurate and reliable gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional replacement gate manufacturing techniques are used with continuous line-type sacrificial gate structures, then the gate structures can be formed across the entire substrate, but the critical dimension control and placement precision of gate cut openings deteriorate as device dimensions decrease
Solution Approach 1:
The continuous line-type sacrificial gate structure is segmented into discrete pillar structures positioned above individual transistor regions. This segmentation allows each pillar to serve as a localized reference for gate cut opening formation, improving placement precision and reducing the impact of dimensional variations as devices scale.
Solution Approach 2:
The pillar structure acts as an intermediary element between the sacrificial gate material and the final gate structure. The pillar provides a stable, precisely-positioned reference that facilitates accurate gate cut opening formation while enabling the replacement gate process to proceed with relaxed precision requirements.
2Productivity
If the critical dimension of the gate cut opening is reduced to accommodate smaller device dimensions, then the packing density increases, but the manufacturing precision and placement accuracy deteriorate
Solution Approach 1:
The invention transitions from a two-dimensional continuous gate structure to a three-dimensional pillar structure that protrudes above the substrate. This vertical dimension provides additional process control leverage, allowing the gate cut opening to be formed with relaxed lateral precision requirements while maintaining accurate positioning through the vertical reference provided by the pillar.
3Ease of manufacture
If the gate cut opening is formed with larger than desired critical dimension, then the manufacturing process becomes more robust, but the device performance decreases due to spacing issues between adjacent transistors
Solution Approach 1:
The pillar structure provides localized reference points for gate cut opening formation, allowing each opening to be independently positioned with appropriate spacing. This local quality approach ensures that each transistor region maintains optimal dimensions and spacing, preventing performance degradation while enabling robust manufacturing processes.
Data Source
AI summary
One illustrative transistor device disclosed herein includes a final gate structure that includes a gate insulation layer comprising a high-k material and a conductive gate, wherein the gate structure has an axial length in a direction that corresponds to a gate width direction of the transistor device. The device also includes a sidewall spacer contacting opposing lateral sidewalls of the final gate structure and a pillar structure (comprised of a pillar material) positioned above at least a portion of the final gate structure, wherein, when the pillar structure is viewed in a cross-section taken through the pillar structure in a direction that corresponds to the gate width direction of the transistor device, the pillar structure comprises an outer perimeter and wherein a layer of the high-k material is positioned around the entire outer perimeter of the pillar material.