Pillar-Structured Light Emitter for Higher Current Density
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Solution Overview
Problem
Existing light emitting elements face challenges in increasing current intensity due to limitations in the number of transistors available for pixel circuits, necessitating optimal current density adjustment for efficient light emission.
Innovation Solution
The light emitting element incorporates pillar structures with a first semiconductor layer, an auxiliary layer, an active layer, and a second semiconductor layer, along with bonding electrodes and an insulative film that exposes non-overlapping surfaces for electrical contact, allowing for precise current distribution and efficient light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the number of transistors in pixel circuit is increased to increase current intensity, then current intensity can be improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The invention divides the light emitting element into multiple pillar structures, each capable of receiving current independently. By segmenting the current reception area into multiple pillars instead of using a single large area, the element can achieve higher total current intensity without requiring additional transistors in the pixel circuit, thus resolving the contradiction between current intensity and device complexity
Solution Approach 2:
The invention transitions from a planar current distribution approach to a three-dimensional pillar structure approach. Multiple pillars extend vertically from the substrate, utilizing the vertical dimension to increase the effective current reception area without expanding the horizontal pixel area or increasing transistor count, thereby achieving higher current intensity without increased device complexity
2Productivity
If current density is increased to improve light emission efficiency, then light emission efficiency is improved, but electrical short circuits between adjacent structures may occur
Solution Approach 1:
The insulative film is applied selectively to specific regions between the pillar structures rather than uniformly across the entire substrate. This localized insulation approach provides sufficient electrical isolation to prevent short circuits between adjacent pillars while maintaining high current density within each pillar for efficient light emission, thus resolving the contradiction between productivity and reliability
Solution Approach 2:
The insulative film acts as an intermediary material placed between the conductive pillar structures. This intermediate layer provides the necessary electrical isolation to prevent short circuits while allowing the pillars to maintain high current density for efficient light emission, effectively mediating between the conflicting requirements of high productivity and high reliability
3Area of stationary object
If pillar structures are placed closer together to increase current reception area, then current reception area is improved, but risk of electrical short circuit increases
Solution Approach 1:
The insulative film is strategically positioned in the gaps between adjacent pillar structures, providing localized electrical isolation only where needed. This allows the pillars to be placed closer together to maximize current reception area while the targeted insulation prevents electrical short circuits between neighboring pillars, resolving the contradiction between area and reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective current management, enhancing the efficiency and performance of light emitting elements by optimizing current density and preventing electrical short circuits.
Implementation Method 1
A light emitting element may receive a current injected thereinto to emit light
Data Source
AI summary
A light emitting element includes pillar structures which include a first semiconductor layer and an auxiliary layer disposed on the first semiconductor layer and are spaced apart from each other, an active layer disposed on the pillar structures, a second semiconductor layer disposed on the active layer, a first bonding electrode which is disposed below the pillar structures and is electrically connected to the first semiconductor layer, and a second bonding electrode which is disposed below the second semiconductor layer and is electrically connected to a non-overlapping surface of a bottom surface of the second semiconductor layer, which does not overlap the pillar structures and the active layer.