Semiconductor Pillar Passivation Liner Undercut Prevention
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Solution Overview
Problem
As semiconductor devices become more highly integrated, the reduction in critical dimensions poses challenges for photolithography processes in forming patterns on wafers, requiring innovative approaches to enhance semiconductor manufacturing efficiency.
Innovation Solution
A semiconductor structure comprising a base with pillars and protrusions, a capping layer, passivation liner, and an isolation layer, along with a method involving a hardmask stack, sacrificial layer, and antireflective coating to form a semiconductor structure with precise patterning and passivation, enabling efficient formation of islands and pillars.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If photolithography processes are used to form patterns on wafers, then semiconductor devices can be manufactured, but reduction in critical dimensions becomes challenging as integration increases
Solution Approach 1:
The patent divides the pattern formation process into multiple stages using multi-layer hardmask stacks with different materials (e.g., silicon oxide, silicon nitride, silicon oxynitride) and thicknesses. Each layer serves as a mask for specific etching steps, enabling precise control of critical dimensions through sequential patterning operations rather than relying on a single photolithography step.
Solution Approach 2:
The patent introduces vertical dimensionality by creating three-dimensional structures including protrusions extending from the substrate surface, multi-layer hardmask stacks with varying thicknesses, and capped pillars. This vertical complexity enables precise lateral dimension control through the interaction of multiple layers during selective etching processes.
2Manufacturing precision
If multi-layer hardmask stacks are used for precise patterning, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent uses intermediate sacrificial layers (e.g., silicon oxide) deposited between the hardmask layers that are selectively removed to create voids and define the final pattern geometry. These intermediary materials facilitate the formation of complex three-dimensional structures by enabling selective etching of specific regions while protecting other areas, thereby simplifying the overall patterning process despite the multi-layer complexity.
Solution Approach 2:
The patent employs materials with different etch selectivities and varying layer thicknesses to achieve precise pattern definition. By changing physical parameters such as layer thickness (e.g., first hardmask layer thicker than second hardmask layer) and material composition, the process enables controlled formation of protrusions and capped pillars with specific dimensions through selective etching.
3Manufacturing precision
If protrusions are formed with precise dimensions, then manufacturing precision is improved, but undercutting may occur without proper passivation
Solution Approach 1:
The patent applies a passivation liner to the sidewalls of protrusions before completing the etching process. This preliminary protective action prevents undercutting by forming a protective barrier on the sidewalls that resists etchant attack, ensuring that the protrusions maintain their intended dimensions and structural integrity throughout the manufacturing process.
Solution Approach 2:
The passivation liner serves as a protective cushion deposited on the sidewalls of protrusions prior to final etching steps. This protective layer compensates for potential etching damage by providing a buffer that prevents the etchant from attacking the protrusion sidewalls, thereby maintaining dimensional accuracy and preventing structural defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise control over pattern formation and passivation, improving semiconductor manufacturing by maintaining desired dimensions and preventing undercutting, thus enhancing the integration and performance of semiconductor devices.
Implementation Method 1
depositing a passivation liner on sidewalls of the remaining capping layer and the protrusions
Implementation Method 2
depositing a passivation liner on sidewalls of the remaining capping layer and the protrusions
Implementation Method 3
depositing a first isolation layer to encircle the pillars, the protrusions, and the remaining capping layer
Implementation Method 4
depositing a first isolation layer to encircle the pillars, the protrusions, and the remaining capping layer
Data Source
AI summary
The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a base, a plurality of islands, and an isolation layer. At least one of the plurality of islands includes a pillar extending from an upper surface of the base, a protrusion connected to the pillar, a capping layer disposed on the protrusion, and a passivation liner disposed on sidewalls of the protrusion and the capping layer. The isolation layer surrounds the islands.