Pillar-Shaped Semiconductor Device Manufacturing Method
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Solution Overview
Problem
Current methods for forming pillar-shaped semiconductor devices, such as surrounding gate transistors (SGTs), face challenges in achieving high positional and shape accuracy, which limits the density and performance of semiconductor devices.
Innovation Solution
A method involving the formation of band-shaped material layers and subsequent etching processes to create semiconductor pillars with high positional relationship and shape accuracy, allowing for the formation of SGTs with improved density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form pillar-shaped semiconductor devices, then the manufacturing process is simpler, but the positional relationship and shape accuracy are insufficient
Solution Approach 1:
The manufacturing process is divided into multiple sequential steps: forming first and second band-shaped material layers in different directions, selectively removing overlapping portions, and creating multiple etching masks. This segmentation allows each step to contribute specifically to the final positional accuracy and shape precision of the semiconductor pillars
Solution Approach 2:
Band-shaped material layers are formed in advance in specific directions and patterns before the actual pillar formation. These pre-formed layers serve as etching masks that define the precise positions and shapes of the semiconductor pillars, enabling high manufacturing precision through preliminary structural preparation
2Productivity
If the density of semiconductor devices is increased, then the performance is improved, but the manufacturing precision requirements become more stringent
Solution Approach 1:
The method introduces directional dimensionality by forming band-shaped material layers extending in first and second directions that are different from each other. This multi-directional approach creates a grid-like pattern that precisely defines pillar positions, enabling high device density while maintaining strict positional control through the intersection of directional bands
Data Source
AI summary
Regions including SiO2 layers, Si3N4 layers, and SiO2 layers, and C layers and SiO2 layers, whose two ends in Y-Y′ direction are located on the SiO2 layers and two ends in X-X′ direction are coincident with the rectangular SiO2 layers, are formed on an i-layer. The i-layer is etched using the SiO2 layers as masks to form Si pillar bases, and the C layers and the SiO2 layers are removed. Thereafter, the SiO2 layers are formed into a circular shape by isotropic etching using the Si3N4 layers as masks, and Si pillars are formed on the Si pillar bases using the circular SiO2 layers as masks.