Semiconductor Pillar Spacer Structure for Void-Free Gap Filling

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Solution Overview

Problem

The challenge of accurately and completely filling gaps or recesses in semiconductor structures becomes difficult with advanced technology process nodes, leading to voids and defects in the final structure, which affects product yield and performance.

Innovation Solution

A method is introduced to shrink the width of protrusions or pillar structures by lateral etching, enlarging the opening of gaps, and using a spacer structure to facilitate complete filling of dielectric materials, thereby improving the filling result and preventing defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional filling methods are used in advanced technology process nodes, then manufacturing simplicity is maintained, but filling accuracy and integrity deteriorate, leading to voids and defects

Engineering Contradiction:

Improvefilling accuracyVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The method performs preliminary actions by forming a mandrel structure with controlled dimensions before the actual filling process. The mandrel is designed with specific width parameters that are smaller than the final filled structure, creating predetermined spaces that guide the subsequent filling process and ensure complete material deposition without voids.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The mandrel structure serves as an intermediary element between the gap region to be filled and the final filled structure. It provides a temporary framework that defines the filling space and ensures uniform material distribution, after which the mandrel is removed to leave the desired filled structure.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If gap openings are enlarged to improve material filling, then filling completeness is improved, but structural integrity of protrusions deteriorates

Engineering Contradiction:

Improvefilling completenessVSAvoidprotrusion integrity

Core Design Contradiction:

Manufacturing precisionVSStrength

Solution Approach 1:

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The mandrel structure is designed with non-uniform width characteristics, where different portions of the mandrel have different widths. This local variation in dimensions allows the gap opening to be enlarged in specific regions to improve filling access, while maintaining adequate structural support in other regions where the mandrel width is controlled to preserve protrusion integrity.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the filling of gaps, reducing defects and improving product yield and performance by ensuring complete material deposition in semiconductor structures.

Implementation Method 1

shrink the width of protrusions or pillar structures by lateral etching

Methodology Applied

Scientific EffectLateral etching:

Implementation Method 2

using a spacer structure to facilitate complete filling of dielectric materials

Methodology Applied

Scientific EffectDielectric material deposition: Deposition (physical)

Data Source

PatentUS12532678B2Method for manufacturing semiconductor structure and semiconductor structure thereof

Publication Date: 2026.01.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor structure including a pillar structure and a spacer structure is provided. The pillar structure is disposed over a substrate, and comprises: a lower layer, disposed on the substrate; an upper layer, disposed over the lower layer; and a dielectric layer, disposed between the lower layer and the upper layer, wherein the upper layer includes a first portion and a second portion disposed below and connecting the first portion. The spacer structure laterally surrounds the pillar structure, and comprises: an upper portion, surrounding the first portion of the upper layer; and a lower portion, disposed below and connecting the upper portion, wherein a first thickness of the upper portion is substantially greater than a second thickness of the lower portion. A method for manufacturing a semiconductor structure is also provided.