Semiconductor Pillar Spacing via Multi-Directional Mask Segmentation
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Solution Overview
Problem
The challenge in manufacturing semiconductor devices lies in achieving high integration and high speed while maintaining a consistent process margin in the exposure process for fine pattern formation, which is exacerbated by the difficulty in maintaining a consistent minimum distance between neighboring pillars.
Innovation Solution
A method of manufacturing semiconductor devices involves forming active structures with a device isolation layer and gate structures, followed by creating mask patterns with specific openings to pattern the active structure, resulting in pillars with a consistent minimum distance between them, achieved through a series of etching and filling processes using various mask layers and dielectric films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional exposure processes are used for fine pattern formation, then manufacturing complexity increases, but manufacturing precision deteriorates due to process margin reduction
Solution Approach 1:
The mask pattern is segmented into multiple opening types (first openings extending in second direction, second openings extending in third direction) arranged in an alternating pattern. This segmentation allows different regions to be etched independently, ensuring consistent minimum distances between neighboring pillars while simplifying the exposure process by providing clear directional guidance for pattern formation.
2Quantity of substance
If high integration is pursued with finer patterns, then device density increases, but manufacturing precision deteriorates due to reduced process margin
Solution Approach 1:
The mask pattern incorporates openings extending in multiple directions (second direction and third direction) rather than a single direction. This dimensional approach allows pillars to be formed with consistent spacing in all directions, enabling high integration density while maintaining manufacturing precision through geometric control rather than relying solely on exposure process margins.
3Manufacturing precision
If conventional single-direction mask patterns are used, then manufacturing simplicity is maintained, but manufacturing precision deteriorates due to inconsistent pillar spacing
Solution Approach 1:
The mask pattern uses asymmetric arrangement of first openings and second openings in alternating fashion, with each opening type extending in different directions. This asymmetric design ensures that when etching occurs, pillars are formed with consistent minimum distances in all directions, achieving manufacturing precision while the alternating pattern provides a systematic approach to managing mask complexity.
Data Source
AI summary
Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises forming an active structure including a plurality of active patterns, a device isolation layer defining the active patterns, and a gate structure across the active patterns and extending in a first direction, forming a first mask pattern on the active structure, and forming a trench by using the first mask pattern as an etching mask to pattern the active structure. Forming the first mask pattern comprises forming in a first mask layer a plurality of first openings extending in a second direction intersecting the first direction, and forming in the first mask layer a plurality of second openings extending in a third direction intersecting the first and second directions.