Multi-Layered Pillar Storage Nodes with Support Layer
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Solution Overview
Problem
In semiconductor devices, particularly in DRAM technology, increasing the height of pillar-shaped storage nodes to enhance charge capacitance leads to a leaning phenomenon between adjacent nodes, causing electrical defects due to the bridging of storage nodes.
Innovation Solution
A semiconductor device with multi-layered pillar type storage nodes is fabricated using a support layer that has integral openings between the nodes, preventing leaning and ensuring sufficient charge capacitance, where the support layer is formed to guide an etch solution for removing mold layers and maintaining node alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of pillar-shaped storage nodes is increased to enhance charge capacitance, then charge capacitance is improved, but a leaning phenomenon occurs between adjacent nodes causing electrical defects
Solution Approach 1:
A support layer is introduced as an intermediary structure between adjacent storage nodes. This support layer extends into the regions between storage nodes and prevents them from leaning toward each other, thereby eliminating the bridging phenomenon while maintaining the increased height of storage nodes for sufficient charge capacitance
Solution Approach 2:
The support layer is formed in the horizontal dimension (extending into regions between nodes) rather than increasing vertical height, providing mechanical separation and preventing the leaning phenomenon without compromising the vertical capacitance storage capability
2Quantity of substance
If the height of storage nodes is increased to obtain higher charge capacitance, then charge capacitance is improved, but adjacent storage nodes lean towards each other
Solution Approach 1:
The support layer acts as a structural intermediary that maintains the vertical integrity and horizontal separation of storage nodes, preventing them from leaning toward each other while allowing the nodes to maintain their increased height for higher capacitance
Solution Approach 2:
The support layer is formed in advance before the storage node material is deposited, establishing a pre-existing structural framework that prevents leaning during and after the node formation process
3Reliability
If a support layer is formed to prevent leaning between storage nodes, then reliability is improved, but device structure becomes more complex
Solution Approach 1:
The support layer serves multiple functions simultaneously: it provides mechanical support to prevent leaning, defines regions between storage nodes, and can be integrated with existing mold layers in the fabrication process, thereby reducing the net increase in device complexity
Data Source
AI summary
A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.