PIM Memory Bank Layout for Faster Neural Network Access

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The von Neumann structure's memory device and computation device separation leads to reduced computation speed due to data transfer time during large computations like artificial neural network operations.

Innovation Solution

A semiconductor memory device with a processing-in-memory (PIM) structure, featuring banks with varying memory cell array sizes and a processor adjacent to a smaller array, allowing for faster access and computation within the memory device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a processing-in-memory structure is introduced to enable computations within the memory device, then computation speed is improved, but device size increases

Engineering Contradiction:
Improvecomputation speedVSAvoiddevice size
Core Design Contradiction:
SpeedVSArea of stationary object

Solution Approach 1:

The memory device is divided into multiple banks, each containing different sizes of memory cell arrays. This segmentation allows the processor to access smaller arrays faster while maintaining the option to access larger arrays when needed, thereby improving computation speed without requiring all banks to have maximum size which would increase overall device area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different banks are configured with different memory cell array sizes according to local computation needs. The processor is positioned adjacent to smaller memory cell arrays in specific banks to minimize access distance and maximize computation speed for frequently used data, while other banks maintain larger arrays for capacity requirements.

Inventive Principle:
Principle #3Local quality

2Speed

If memory cell array size is reduced to improve access speed, then computation performance is improved, but storage capacity is reduced

Engineering Contradiction:
Improvememory access speedVSAvoidstorage capacity
Core Design Contradiction:
SpeedVSQuantity of substance

Solution Approach 1:

The total storage capacity is segmented across multiple banks, each with its own memory cell array of optimized size. This allows the system to achieve fast access speeds by utilizing smaller arrays in banks adjacent to the processor while maintaining overall high storage capacity through the combined capacity of all banks.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Instead of increasing the size of a single memory cell array to improve capacity, the system adds more banks with varying array sizes. This dimensional expansion from single-array to multi-array architecture allows simultaneous optimization of both speed (through smaller arrays) and capacity (through multiple arrays).

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250377813A1Semiconductor memory device and memory system including the same
Publication Date: 2025.12.11 SAMSUNG ELECTRONICS CO LTD
  • US20250377813A1 patent drawing
  • US20250377813A1 patent drawing
  • US20250377813A1 patent drawing

AI summary

At least one embodiment of the present disclosure provides a semiconductor memory device including: a substrate; a plurality of banks on the substrate, the plurality of banks including a first memory cell array of a first size and a second memory cell array of a second size, the second size being smaller than the first size; a peripheral circuit disposed between at least two of the plurality of banks; and a processor disposed adjacent to the second memory cell array.