Pin Capacitor Parallel Structure for Integration Density
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Solution Overview
Problem
As semiconductor devices integrate, reducing the size of pin capacitors decreases their capacitance, degrading the reliability of the device and increasing noise during power supply and data input/output.
Innovation Solution
A pin capacitor design that includes a first capacitor with an isolation layer as a dielectric and a second capacitor with a spacer as a dielectric, both coupled in parallel, along with a plug over a dummy active area, to increase capacitance without increasing area, using materials with high dielectric constants and specific structural arrangements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of the gate is reduced to increase integration degree, then the pad area can be reduced, but the capacitance of the pin capacitor decreases
Solution Approach 1:
The patent implements a nested structure where a first capacitor (comprising gate, isolation layer, and substrate) and a second capacitor (comprising plug, spacer, and gate) are positioned in overlapping vertical and lateral spaces. The second capacitor is effectively nested within the spatial envelope defined by the first capacitor's components, allowing both capacitors to occupy the same footprint area without significant increase in overall device area. This nesting enables doubled capacitance from the same pad area, resolving the contradiction between integration density and capacitance.
Solution Approach 2:
The patent transitions from a single-planar capacitor design to a three-dimensional stacked configuration. By forming the first capacitor with vertical stacking (gate over isolation layer over substrate) and the second capacitor with lateral extension (plug extending from gate sidewall), the design utilizes the third dimension (vertical depth) and lateral depth simultaneously. This dimensional expansion allows increased capacitance without increasing the top-view pad area, addressing the contradiction between integration degree and capacitance.
2Area of stationary object
If the size of the gate is reduced, then the pad area is reduced, but the noise during power supply and data input/output increases
Solution Approach 1:
The nested dual-capacitor configuration allows the total capacitance to be doubled while maintaining the same pad footprint. By positioning the first and second capacitors to overlap in space and share common components (gate coupled to pad, substrate and plug coupled to ground), the design achieves higher capacitance density. This increased capacitance provides better noise filtering capability without requiring larger pad area, thus resolving the contradiction between pad size and noise reduction.
Solution Approach 2:
The patent employs a composite capacitor structure where two different capacitor configurations (first capacitor with isolation layer dielectric, second capacitor with spacer dielectric) are combined in parallel. This composite approach leverages the advantages of both configurations to achieve superior noise filtering performance in a compact area, addressing the contradiction between reduced pad area and noise control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively increases the capacitance of pin capacitors, reducing noise and enhancing the reliability of semiconductor devices even as the pad area is reduced, by controlling the number of gates and plugs coupled to the pad and ground units.
Implementation Method 1
A pin capacitor design that includes a first capacitor with an isolation layer as a dielectric and a second capacitor with a spacer as a dielectric
Data Source
AI summary
A pin capacitor of a semiconductor device includes a first isolation layer formed in a substrate and defining a dummy active area, a plurality of gates formed over the first isolation layer, a spacer formed at both sidewalls of each of the gates, and a plug formed over the dummy active area and in contact with the spacer. The substrate and the plug are coupled to a ground unit, and the gate is coupled to a pad unit. That is, the pin capacitor includes a first capacitor including the gate, the isolation layer, and the substrate and a second capacitor including the gate, the spacer, and the plug, which are coupled in parallel to each other.