Carrier-Based PIN Phase Shifter for Photonic Integrated Circuits
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Solution Overview
Problem
Existing optical phase shifters in photonic integrated circuits face trade-offs between speed, size, optical loss, and power consumption, necessitating the development of compact and efficient phase shifters.
Innovation Solution
The implementation of a PIN phase shifter with a top-doped waveguide and side-doped regions, where a PIN diode is formed by doping regions of different conductivity types, allows for controlled current injection to modulate the refractive index and phase of light, optimizing phase shifting performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional phase shifters are used, then phase modulation is achieved, but there are trade-offs between speed, size, optical loss, and power consumption
Solution Approach 1:
The waveguide is segmented into multiple doped regions (first doped region, second doped region, third doped region) with different conductivity types, allowing independent control of different waveguide sections. This segmentation enables faster phase modulation by applying voltage to specific regions without requiring entire waveguide heating, while reducing power consumption through localized carrier injection.
Solution Approach 2:
Different regions of the waveguide are doped with different conductivity types (n-type, p-type) to create local electrical properties. The first doped region has first conductivity type, second doped region has second conductivity type, and third doped region has third conductivity type. This local quality variation enables precise control of carrier distribution and refractive index changes in specific areas, improving modulation speed and efficiency.
2Area of stationary object
If compact phase shifters are designed, then size is reduced, but optical loss and manufacturing complexity may increase
Solution Approach 1:
The doping regions are arranged in a vertical stack configuration with the first doped region, second doped region, and third doped region positioned at different heights within the waveguide structure. This three-dimensional arrangement allows compact phase shifting functionality in a small footprint area while maintaining manufacturability through standard semiconductor doping processes applied in sequential layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the efficiency and reduces defects, leading to improved phase modulation capabilities while minimizing optical losses and power consumption, thereby achieving a compact and efficient phase shifting solution.
Implementation Method 1
allows for controlled current injection to modulate the refractive index and phase of light
Implementation Method 2
modulate the refractive index and phase of light, optimizing phase shifting performance
Data Source
AI summary
Embodiments are directed to photonic integrated circuits that include a carrier-based phase shifter. The carrier-based phase shifter is configured as a PIN phase shifter with a waveguide formed from a strip extending from a slab waveguide. The PIN phase shifter includes a first set of doping regions positioned in a slab waveguide and a second set of doping regions positioned the strip. Each of the first set of doping regions has a first conductivity type, and each of the second set of doping regions has a second conductivity type that is different that the first conductivity type.