Pinless Electrode System for Homogeneous Plasma Treatment
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Solution Overview
Problem
Existing plasma treatment processes for semiconductor substrates face challenges in achieving homogeneous plasma distribution due to the use of loading pins, leading to voltage peaks and inhomogeneous plasma fields, which can result in inaccurate substrate positioning and inefficient plasma processing.
Innovation Solution
A two-part electrode system is introduced, where the inner electrode is movable and integrates a circular substrate receptacle, eliminating the need for loading pins by forming a closed, flat contact surface with the outer electrode, ensuring uniform potential and homogeneous plasma distribution across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If loading pins are used to hold substrates, then substrate positioning is achieved, but plasma field homogeneity deteriorates due to voltage peaks at pin locations
Solution Approach 1:
The invention removes the loading pins from the substrate holder structure entirely. Instead of using pins to position substrates, the system employs a pinless electrostatic holding mechanism where the substrate is attracted to and held by the electrostatic field between the substrate holder electrode and the substrate itself, eliminating the plasma field disturbances caused by metallic pins
Solution Approach 2:
The invention replaces the mechanical pin-based positioning system with an electrostatic field-based holding system. The mechanical contact of loading pins is substituted by electrostatic attraction forces, allowing substrate positioning and holding without physical contact that would disrupt the plasma field
2Reliability
If mechanical clamping devices are used to secure substrates, then substrate holding is achieved, but substrate quality deteriorates due to abrasion and sagging
Solution Approach 1:
The invention replaces mechanical clamping devices with an electrostatic holding system. The substrate is held in place by electrostatic attraction between the charged electrode and the substrate surface, eliminating mechanical contact that causes abrasion, deformation, and sagging while maintaining secure holding stability
Solution Approach 2:
The substrate holder employs a thin-film dielectric layer on the electrode surface that enables electrostatic field penetration while protecting the electrode. This thin film structure allows the electrostatic force to act on the substrate without requiring mechanical clamping, preventing substrate deformation
3Ease of operation
If loading pins are used for substrate handling, then substrate transfer is achieved, but plasma processing efficiency deteriorates due to inhomogeneous plasma distribution
Solution Approach 1:
The invention extracts and removes the loading pins from the substrate handling system. Substrate transfer is achieved through electrostatic attraction and release mechanisms, and robotic manipulation, eliminating the pins that create plasma field inhomogeneities and reduce processing efficiency
Solution Approach 2:
The invention changes the fundamental parameter of substrate holding from mechanical contact to electrostatic field interaction. This parameter change eliminates the metallic pins that reflect radio frequency energy and create voltage peaks, resulting in homogeneous plasma distribution and improved processing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances plasma homogeneity, reduces substrate bending issues for thin wafers, and simplifies the loading/unloading process, resulting in more efficient and accurate plasma treatment with improved substrate handling and processing outcomes.
Implementation Method 1
The substrate can be secured by an electrical voltage between the sample-holder electrodes
Implementation Method 2
a high-frequency voltage is applied to the holding device of the (semiconductor) substrate in order to direct the reactive ions from the plasma to the surface to be treated
Implementation Method 3
Plasma chambers can be operated in a pulsed manner or continuously, for example with plasma processes based on high-frequency discharge, microwave discharge, d.c. discharge
Data Source
AI summary
A device for bombarding at least one substrate with a plasma with a first electrode and a second electrode that can be arranged opposite thereto, which electrodes are formed together producing the plasma between the electrodes wherein at least one of the electrodes is formed from at least two electrode units. In addition, this invention relates to a corresponding method.