Pipe Latch Circuit for Auto-Precharge Signal Generation
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Solution Overview
Problem
Semiconductor devices face challenges in efficiently managing read-to-precharge time (tRTP) and write recovery time (tWR) during auto-precharge operations, leading to complexities in circuit design and layout area utilization.
Innovation Solution
The semiconductor device incorporates input/output control signal generation circuits, bank address latch circuits, pipe latch circuits, and auto-precharge signal generation circuits to generate and latch auto-precharge signals, allowing for separate latching of read and write auto-precharge flags, thereby reducing the need for separate storage and optimizing circuit layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate storage circuits are used for read and write auto-precharge flags, then reliability of auto-precharge operation is improved, but layout area increases
Solution Approach 1:
The patent merges the storage functions for read and write auto-precharge flags into a single pipe latch circuit. The pipe latch circuit receives both the read auto-precharge flag signal and the write auto-precharge flag signal, and stores them in the same latch structure, thereby reducing the layout area while maintaining separate control paths for reliable operation.
Solution Approach 2:
The pipe latch circuit is designed to serve multiple functions by storing both read and write auto-precharge flag signals in the same circuit structure. This multi-functional approach eliminates the need for separate dedicated storage circuits for each flag type, thus reducing overall layout area while preserving the reliability benefits of separate flag management.
2Productivity
If complex control signal generation circuits are used to manage read-to-precharge and write recovery times, then productivity of auto-precharge operation is improved, but device complexity increases
Solution Approach 1:
The patent extracts the time management functions for read-to-precharge and write recovery into dedicated control signal generation circuits that operate independently. The read control signal generation circuit handles read-to-precharge timing, while the write control signal generation circuit handles write recovery timing, allowing each to be optimized separately without increasing overall system complexity.
Solution Approach 2:
The control signal generation is segmented into separate read and write control signal generation circuits. Each circuit is responsible for generating control signals for its specific operation type, which simplifies the design by allowing independent optimization of timing parameters and reduces the complexity of coordinating multiple timing functions.
Data Source
AI summary
A semiconductor device may include an input/output control signal generation circuit configured to generate at least one input control signal and at least one output control signal from a first control clock in response to a shifting control signal, a bank address latch circuit configured to generate a latch bank address signal by latching at least one bank address in response to the at least one input control signal and the at least one output control signal, a pipe latch circuit configured to generate an auto-precharge latch signal by latching an auto-precharge flag signal in response to the at least one input control signal and the at least one output control signal, and an auto-precharge signal generation circuit configured to generate at least one auto-precharge signal from the auto-precharge latch signal.


