Pipe Transistor Structural Stability in 3D Memory Integration
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Solution Overview
Problem
Existing semiconductor devices face challenges in stabilizing the structure of pipe transistors, particularly in three-dimensional memory devices, where the formation process can lead to structural distortions and inefficiencies in integrating memory cells.
Innovation Solution
The semiconductor device includes a pipe channel layer surrounded by a pipe gate and an oxidization layer, with source and drain side channel layers extending beyond the oxidization layer, and a method of manufacturing involving alternately stacking sacrificial layers and insulating layers to form through-holes and oxidization regions, ensuring a stable pipe transistor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are three-dimensionally arranged to highly integrate the semiconductor device, then integration density is improved, but structural stability of pipe transistors deteriorates due to process-induced distortions
Solution Approach 1:
The pipe transistor structure is divided into multiple pipe gates (first pipe gate, second pipe gate, third pipe gate) stacked vertically, with each pipe gate having concave portions that segment the channel layer into distinct regions. This segmentation allows independent control and stabilization of each transistor unit, preventing cumulative structural distortions in three-dimensional arrangements.
Solution Approach 2:
The pipe gates are arranged in a nested configuration where the first pipe gate is surrounded by a first insulating layer, the second pipe gate is surrounded by a second insulating layer, and the third pipe gate is surrounded by a third insulating layer. Each pipe gate is positioned within the structure of the previous layer, creating a nested doll-like structure that maintains structural integrity while enabling high integration density.
2Quantity of substance
If pipe transistors are formed in three-dimensional memory devices, then memory capacity is improved, but manufacturing complexity increases due to multiple stacking processes
Solution Approach 1:
The first pipe gate, first insulating layer, second pipe gate, second insulating layer, third pipe gate, and third insulating layer are formed in a predetermined stacking sequence during the manufacturing process. This preliminary arrangement of layers simplifies subsequent processing steps and enables systematic formation of multiple pipe transistors, reducing overall manufacturing complexity despite the three-dimensional structure.
Solution Approach 2:
Each pipe gate structure (pipe gate + insulating layer) serves multiple functions: it acts as a control electrode for the channel layer, provides electrical isolation from adjacent structures, and forms part of the three-dimensional stacked architecture. This multi-functionality reduces the need for additional specialized components, simplifying the manufacturing process.
3Stability of the object's composition
If pipe gates are surrounded by insulating layers to stabilize structure, then structural stability is improved, but device complexity increases due to additional layers
Solution Approach 1:
The insulating layers are merged with the pipe gate structures to form integrated units where the first insulating layer surrounds the first pipe gate, the second insulating layer surrounds the second pipe gate, and the third insulating layer surrounds the third pipe gate. This merging creates a unified structure that provides structural stability without requiring separate insulating components, thereby reducing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the stability and integration density of memory devices by maintaining a stable pipe transistor structure and improving the integration degree of memory cells within a limited area.
Implementation Method 1
an oxidization layer formed between the pipe gate and the pipe channel layer
Implementation Method 2
forming a source side through-hole and a drain side through-hole exposing the gap fill layer by etching the sacrificial layers and the insulating layers
Data Source
AI summary
A semiconductor device may include pipe channel layer, and a pipe gate surrounding the pipe channel layer. The semiconductor device may include an oxidization layer formed between the pipe gate and the pipe channel layer. The semiconductor device may include a source side channel layer and a drain side channel layer extended from the pipe channel layer to protrude further than the oxidization layer.