Pitch Adjustment Layer Rework for Semiconductor Mask Pattern Control
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Solution Overview
Problem
Existing negative tone development (NTD) and positive tone development (PTD) processes in lithography operations face issues with depth of focus (DOF), line width roughness (LWR), and scum, which degrade lithography performance and yield, leading to device failure.
Innovation Solution
A method involving forming a pitch adjustment layer on a patterned photoresist layer to define a mask pattern, with a rework operation to remove the layer if it fails to meet semiconductor fabrication specifications, using a pitch adjustment material that reacts with the photoresist layer to form a pitch adjustment layer to define a mask pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If NTD or PTD processes are used to achieve reduced device size, then line width reduction is improved, but depth of focus, line width roughness, and scum issues worsen
Solution Approach 1:
The patent segments the photoresist layer into multiple layers (first photoresist layer and second photoresist layer) with different functions. The first layer provides the basic pattern, while the second layer addresses DOF and LWR issues, allowing each layer to be optimized independently for its specific function.
Solution Approach 2:
The patent introduces a vertical dimension by stacking multiple photoresist layers at different heights above the substrate. This multi-layer configuration allows the pattern to be formed in three-dimensional space, enabling pitch reduction while maintaining DOF and reducing LWR through the additional vertical dimension.
2Manufacturing precision
If pitch adjustment layer is formed to define mask pattern, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The pitch adjustment layer is formed in advance before the final patterning step. This preliminary action allows the pitch to be pre-adjusted to the desired value, ensuring manufacturing precision is achieved before subsequent processing steps begin.
Solution Approach 2:
The pitch adjustment layer acts as an intermediary between the photoresist pattern and the final target layer. It mediates the pitch transformation by providing a controlled interface that enables precise pitch adjustment while simplifying the overall manufacturing process through this intermediate structure.
3Reliability
If rework operation is performed to remove pitch adjustment layer when specification is not met, then yield is improved, but loss of time increases
Solution Approach 1:
The patent implements a feedback mechanism where the pitch adjustment layer is inspected after formation. If the mask pattern does not meet specifications, the feedback triggers a rework operation to remove and re-form the layer, ensuring high yield through iterative quality control.
Solution Approach 2:
When the pitch adjustment layer fails to meet specifications, it is discarded through removal in the rework operation. The materials and process knowledge are then recovered and applied in the re-formation of the layer, improving subsequent iterations while maintaining high yield standards.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves yield by allowing for precise control of pitch and alignment, reducing defects and enhancing semiconductor device performance.
Implementation Method 1
forming a pitch adjustment material on the patterned photoresist layer, wherein the pitch adjustment material reacts with the patterned photoresist layer to form a pitch adjustment layer at an interface between the pitch adjustment material and the patterned photoresist layer
Data Source
AI summary
A method of manufacturing a semiconductor device structure is provided. The method includes: providing a substrate; forming a photoresist layer on the substrate; patterning the photoresist layer to form a patterned photoresist layer; forming a pitch adjustment layer on the patterned photoresist layer to define a mask pattern; and determining whether the mask pattern meets a specification of semiconductor fabrication processes; when it is determined that the mask does not meet the specification of semiconductor fabrication processes, performing a rework operation to remove the pitch adjustment layer.