Active Pixel Sensor Bias Layer Layout for Noise Shielding
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Solution Overview
Problem
Active pixel sensors face noise interference and stability issues due to high and low level signal jumps in gate and data signal lines, which affect the bias voltage signal, and are prone to electrostatic breakdown from static electricity, requiring effective shielding.
Innovation Solution
The active pixel image sensor incorporates a bias voltage layer with hollowed structures that overlap gate and data signal lines to reduce coupling and noise, and includes a shield layer to mitigate static electricity, with a grid structure for improved signal stability and shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the bias voltage layer is made as a continuous planar layer, then the manufacturing process is simple, but the overlapping area with signal lines causes signal noise and electrostatic breakdown
Solution Approach 1:
The continuous planar bias voltage layer is segmented into multiple isolated island-shaped bias voltage regions. Each island is positioned over a photoelectric conversion unit, creating discrete overlapping areas with signal lines rather than continuous overlap. This segmentation reduces the total overlapping area while maintaining manufacturing simplicity through a straightforward patterning process.
Solution Approach 2:
The bias voltage layer transitions from a uniform continuous structure to a non-uniform distributed island structure. The local overlapping area between the bias voltage layer and signal lines is controlled and optimized at each photoelectric conversion unit location, reducing signal noise and electrostatic breakdown risk while maintaining adequate bias voltage coverage where needed.
2Reliability
If the bias voltage layer completely covers the photoelectric conversion structure, then the bias voltage coverage is sufficient, but the overlapping area with signal lines increases causing more noise
Solution Approach 1:
The bias voltage layer is divided into multiple isolated island regions, each providing localized bias voltage coverage over individual photoelectric conversion units. This segmentation ensures sufficient bias voltage coverage at each pixel location while minimizing the total overlapping area with signal lines, thereby reducing signal noise.
Solution Approach 2:
The excessive overlapping areas between the bias voltage layer and signal lines are extracted and removed by configuring the bias voltage layer as discrete islands rather than a continuous layer. This extraction eliminates the harmful overlap while preserving the necessary bias voltage coverage over the photoelectric conversion structures.
3Object-generated harmful factors
If the hollowed structures are made larger to reduce overlapping area, then the signal noise is reduced, but the photoelectric conversion area is blocked
Solution Approach 1:
Instead of creating large hollowed areas, the bias voltage layer is segmented into multiple small isolated islands. Each island is sized to provide necessary bias voltage coverage without creating excessive overlap with signal lines. This segmentation achieves noise reduction while preserving photoelectric conversion area.
Solution Approach 2:
The bias voltage layer configuration is optimized locally at each photoelectric conversion unit, creating island regions with dimensions specifically tailored to provide adequate bias voltage coverage while minimizing overlap with signal lines. This local optimization reduces signal noise without blocking photoelectric conversion area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces noise and improves signal stability by minimizing overlapping areas between signal lines and the bias voltage layer, while effectively shielding against static electricity, enhancing the reliability of the active pixel image sensor and display devices.
Implementation Method 1
the bias voltage layer includes at least one first hollowed structure, and an orthographic projection of the first hollowed structure on the base substrate overlaps an orthographic projection of at least one of the gate signal line and the data signal line on the base substrate
Implementation Method 2
The active pixel image sensor incorporates a bias voltage layer with hollowed structures that overlap gate and data signal lines to reduce coupling and noise, and includes a shield layer to mitigate static electricity
Data Source
AI summary
Disclosed are an active pixel image sensor and a display device. The active pixel image sensor includes: a base substrate; a photoelectric conversion structure arranged on the base substrate; multiple gate signal lines and multiple data signal lines crossed in an insulating manner, the multiple gate signal lines and the multiple data signal lines being configured to provide electrical signals to the photoelectric conversion structure; and a bias voltage layer, arranged on the photoelectric conversion structure and electrically connected with the photoelectric conversion structure, the bias voltage layer being configured to provide a bias voltage to the photoelectric conversion structure; the bias voltage layer includes at least one first hollow structure; and an orthographic projection of the first hollow structure on the base substrate and an orthographic projection of at least one of the gate signal lines and the data signal lines on the base substrate overlap each other.