Pixel Transistor Buffer Layer Thickness for Display Driving Range
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Solution Overview
Problem
Existing display devices face challenges in achieving a wide driving range and reliability due to the limitations in the design and manufacturing of transistors within the pixel circuits.
Innovation Solution
The display device incorporates a buffer layer with varying thicknesses in different portions to accommodate pixel transistors, using silicon oxide and silicon nitride layers to enhance the driving range and reliability, and includes a conductive layer and barrier layer to support transistor functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform thickness buffer layer is used for all pixel transistors, then the manufacturing process is simple, but the driving range and reliability are limited
Solution Approach 1:
The buffer layer is designed with different thicknesses in different regions: a first thickness over the first pixel transistor and a second thickness over the second pixel transistor. This local variation in thickness allows optimization of electrical characteristics for different transistor types, improving driving range and reliability without requiring complete structural redesign
Solution Approach 2:
The invention changes the thickness parameter of the buffer layer from a uniform value to variable values (first thickness and second thickness) depending on the underlying transistor type. This parameter modification enables tailored electrical performance for driving transistors versus switching transistors, resolving the contradiction between reliability and complexity
2Reliability
If the buffer layer thickness is increased for all transistors, then reliability improves, but manufacturing precision requirements increase
Solution Approach 1:
Instead of uniformly increasing thickness across all transistors, the invention applies increased thickness only where needed (first thickness for driving transistor) while maintaining appropriate thickness elsewhere (second thickness for switching transistor). This localized approach achieves reliability improvement without imposing uniform high precision requirements across the entire manufacturing process
Data Source
AI summary
A display device includes a circuit layer disposed on a base layer and including a buffer layer including a plurality of layers and a plurality of pixel transistors disposed on the buffer layer, and a display layer disposed on the circuit layer and including a light-emitting element. An upper layer forming a top of the plurality of layers included in the buffer layer includes a first portion overlapping a first semiconductor pattern of a first pixel transistor among the plurality of pixel transistors in a plan view, and a second portion overlapping a second semiconductor pattern of a second pixel transistor among the plurality of pixel transistors in a plan view. A first thickness of the first portion and a second thickness of the second portion are different from each other.