Pixel Circuit Layout With Program Capacitor for High-Resolution Displays
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Solution Overview
Problem
Existing display devices face challenges in achieving high-resolution and high-integration due to limitations in pixel circuit design, particularly in reducing channel length and ensuring sufficient capacitance for efficient operation.
Innovation Solution
The display device incorporates a novel pixel circuit design with transistors arranged in a specific configuration, including a first and second switching transistor with overlapping active patterns and gate signal lines, and a connection pattern forming a program capacitor, which reduces channel length and secures sufficient capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If transistors are arranged in conventional pixel circuit design, then device complexity is reduced, but manufacturing precision and high-resolution integration cannot be achieved
Solution Approach 1:
The pixel circuit is segmented into multiple transistor components (first switching transistor, second switching transistor, driving transistor) with distinct active patterns and gate signal lines. This segmentation allows each component to be optimized independently for precision while maintaining overall circuit functionality, resolving the contradiction between manufacturing precision and device complexity.
Solution Approach 2:
The patent utilizes overlapping active patterns and gate signal lines in the planar dimension to achieve higher integration density. By arranging transistors to overlap in the XY-plane rather than stacking vertically or extending linearly, the design achieves high-resolution integration without proportionally increasing device complexity.
2Manufacturing precision
If channel length is reduced for high-resolution, then integration density increases, but capacitance sufficiency for efficient operation deteriorates
Solution Approach 1:
The patent combines multiple functional elements (switching transistors, driving transistor, and capacitive structures) into a integrated pixel circuit layout where overlapping active patterns serve both as transistor channels and capacitive storage regions. This merging allows short channel lengths for high resolution while maintaining sufficient capacitance through the overlapping structure, resolving the contradiction between manufacturing precision and reliability.
3Reliability
If transistors are spaced apart for proper operation, then operational reliability is maintained, but area occupied increases reducing integration density
Solution Approach 1:
The patent transitions from linear or vertical transistor arrangement to a planar overlapping configuration where active patterns and gate signal lines occupy the same XY-space. This dimensional optimization allows transistors to be electrically separated for reliable operation while physically overlapping to minimize area, resolving the contradiction between reliability and area occupancy.
Solution Approach 2:
The pixel circuit design nests multiple transistor components within each other's spatial footprint through overlapping active patterns and gate signal lines. The first switching transistor, second switching transistor, and driving transistor are arranged such that their active regions interleave, creating a nested-like structure that maintains operational independence while minimizing total area.
Data Source
AI summary
A display device includes: a first pixel circuit including: a first driving transistor that generates a driving current, a first-first switching transistor including a first active pattern and a portion of a first gate signal line overlapping the first active pattern, and a second-first switching transistor including a portion of a second active pattern spaced apart from the first active pattern and a portion of a second gate signal line overlapping the second active pattern, and facing the first-first switching transistor, a second pixel circuit next to the first pixel circuit in a first direction and including: a second driving transistor that generates a driving current and a second switching transistor including a third active pattern spaced apart from the first and second active patterns and a portion of the second gate signal line overlapping the third active pattern, and a light-emitting element on the first and second pixel circuits.