Pixel Circuit Oxide Semiconductor Layout for Wide Drive Voltage

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing display devices face limitations in achieving a wide drive voltage range, which affects the performance and efficiency of transistors used in pixel circuits.

Innovation Solution

Incorporating transistors with crystalline indium gallium oxide (IGO) and amorphous indium tin gallium zinc oxide (ITGZO) semiconductors, along with silicon semiconductors, to form a pixel circuit that includes specific gate electrode configurations and voltage line arrangements, enhancing the drive voltage range.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional semiconductors are used in transistors, then the manufacturing process is simpler, but the drive voltage range is limited

Engineering Contradiction:

Improvedrive voltage rangeVSAvoidtransistor structure complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent employs composite semiconductor materials including crystalline indium gallium oxide (IGO) and amorphous indium tin oxide (ITO) to construct transistors with enhanced drive voltage range. The composite material approach allows the transistor to achieve wider voltage operation while maintaining manageable manufacturing complexity through established thin-film deposition techniques.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent implements dual-gate transistor structures where different regions of the semiconductor layer are selectively controlled by first and second gate electrodes. This local quality approach enables independent optimization of threshold voltage and drive voltage characteristics in different channel regions, achieving wide drive voltage range without excessive overall device complexity.

Inventive Principle:

Principle #3Local quality

2Adaptability or versatility

If oxide semiconductors are used to expand drive voltage range, then the voltage range improves, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvedrive voltage rangeVSAvoidsemiconductor layer formation precision

Core Design Contradiction:

Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent utilizes parameter changes in oxide semiconductor materials, specifically varying the crystalline-to-amorphous phase ratio and compositional ratios of indium, gallium, and tin, to achieve wide drive voltage range. These material parameter adjustments can be implemented through controlled deposition conditions rather than requiring extreme manufacturing precision, thus resolving the contradiction between expanded voltage range and manufacturing precision requirements.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20260080826A1Display device, manufacturing method thereof, and elctronic device including the same

Publication Date: 2026.03.19 SAMSUNG DISPLAY CO LTD

AI summary

A display device includes multiple insulating layers, a light emitting element, and a pixel circuit electrically connected to the light emitting element. The pixel circuit includes a first transistor that controls a driving current of the light emitting element and a second transistor that outputs a data voltage. A first semiconductor pattern of the first transistor includes a crystalline indium gallium oxide (IGO) semiconductor, and a second semiconductor pattern of the second transistor includes an amorphous indium tin gallium zinc oxide (ITGZO) semiconductor.