Hybrid Pixel Detector Braking Layer for Fast 4D-STEM Imaging

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Solution Overview

Problem

Direct-converting pixel detectors face limitations in high-frame-rate applications due to low spatial resolution and electron flux-induced lattice defects, particularly in 4D STEM, where high-energy electrons degrade the sensor material and limit pixel size below 150 μm.

Innovation Solution

A hybrid pixel detector with a braking layer on the front electrode to decelerate high-energy electrons, made from low-Z materials like aluminum or organic compounds, reduces electron energy before it hits the sensor material, preventing lattice defects and enhancing spatial resolution, and an ASIC with readout circuits processes signals from sensor pixels to provide high-flux detection capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high-energy electrons are used for 4D STEM imaging, then electron flux and detection speed are improved, but lattice defects increase and spatial resolution degrades

Engineering Contradiction:
Improveframe rateVSAvoidspatial resolution
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A braking layer made of low-Z material (such as aluminum or organic compounds) is introduced as an intermediary between the high-energy electron beam and the sensor material. This braking layer decelerates the electrons before they reach the sensor, preventing lattice defects while maintaining high electron flux for fast frame rates in 4D STEM imaging

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If pixel size is reduced below 150 μm, then spatial resolution is improved, but electron scattering effects increase and detection efficiency decreases

Engineering Contradiction:
Improvespatial resolutionVSAvoiddetection efficiency
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The braking layer performs preliminary deceleration of electrons before they enter the sensor material. This preliminary action reduces electron energy and scattering effects, enabling the use of smaller pixel sizes below 150 μm while maintaining detection efficiency and spatial resolution in 4D STEM applications

Inventive Principle:
Principle #10Preliminary action

3Productivity

If electron flux is increased for high-flux detection, then frame rate is improved, but lattice atom displacement increases and sensor degradation accelerates

Engineering Contradiction:
Improveframe rateVSAvoidlattice defects
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The braking layer converts the harmful high-energy electron beam into a beneficial low-energy electron beam by decelerating electrons before they reach the sensor. This allows high electron flux to be maintained for high frame rates while the converted low-energy electrons no longer cause lattice atom displacement or sensor degradation

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables high-flux detection in 4D STEM and other electron microscopy applications with improved spatial resolution and reduced sensor degradation, allowing for higher frame rates and efficient data processing.

Implementation Method 1

The braking layer is configured to decelerate the electron beam by inelastic scattering

Methodology Applied
Scientific EffectInelastic scattering: Scattering

Implementation Method 2

A sensor tile with a front side facing incident radiation, and a back side opposite the front side. The sensor tile comprises or is made from a sensor material sensitive to the radiation to be detected

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS20240162002A1Fast framing electron detector for 4d-stem
Publication Date: 2024.05.16 DECTRIS AG
  • US20240162002A1 patent drawing
  • US20240162002A1 patent drawing
  • US20240162002A1 patent drawing

AI summary

A radiation detector for position-resolved detection of radiation comprises at least one sensor tile with a front side facing incident radiation, and a back side opposite the front side. The sensor tile comprises a sensor material sensitive to the radiation. A front electrode is arranged on the front side of the sensor tile. A braking layer is arranged on the front electrode and at least partly covers the front electrode, for decelerating electrons in the incident radiation. A set of contacts of electrically conducting material is arranged on the back side of the sensor tile and in contact with the sensor material, thereby defining sensor pixels. At least one ASIC comprises a set of readout circuits in electrical connection with the contacts, each readout circuit being configured to process a signal received from the sensor pixel the readout circuit is electrically connected to. Each readout circuit of the set is configured to provide an output signal representative of the radiation incident in the corresponding sensor pixel.