Pixel Device Parallel MIM MOS Capacitors Area Constraint

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Solution Overview

Problem

Conventional pixel devices face a reduction in storage capacitor capacitance when the area is decreased, leading to inefficient use of space and a need to maintain or increase capacitance without expanding the device area.

Innovation Solution

The implementation of a pixel device with parallel-connected capacitors, including a metal-insulator-metal (MIM) and metal-oxide-silicon (MOS) structure, within the existing space to enhance capacitance, utilizing different metal and poly-silicon layers with dielectrics to maintain capacitance even as the panel size decreases.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the pixel device area is decreased, then the device becomes more compact, but the storage capacitor capacitance decreases

Engineering Contradiction:
Improvepixel device areaVSAvoidcapacitor capacitance
Core Design Contradiction:
Area of stationary objectVSQuantity of substance

Solution Approach 1:

The patent implements nested capacitors where a first capacitor is formed within the same pixel device area as a second capacitor. The first capacitor uses a first electrode and second electrode with first and second insulators, while the second capacitor uses the second electrode as a shared electrode with a third electrode and additional insulators. This nesting allows both capacitors to occupy overlapping spatial regions, effectively doubling the capacitance without increasing the pixel area.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent transitions from a single-plane capacitor structure to a multi-layer three-dimensional structure by stacking electrodes and insulators vertically. Multiple capacitor structures are formed in different layers within the same planar footprint, utilizing the vertical dimension to increase total capacitance while maintaining a compact pixel area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If a single capacitor structure is used, then the device complexity is reduced, but the capacitance is insufficient for maintaining voltage

Engineering Contradiction:
Improvecapacitor structure complexityVSAvoidcapacitor capacitance
Core Design Contradiction:
Device complexityVSQuantity of substance

Solution Approach 1:

The patent merges two capacitor structures into a single integrated unit where the second electrode serves as a shared component for both capacitors. This merging approach increases total capacitance while minimizing the increase in device complexity by reusing common electrodes and insulator layers rather than completely duplicating separate capacitor structures.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The second electrode performs multiple functions: it serves as one electrode for the first capacitor and simultaneously as the other electrode for the second capacitor. This multi-functionality increases the effective capacitance without proportionally increasing the number of discrete components, thereby managing device complexity efficiently.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively increases capacitance without increasing the pixel device area, ensuring the necessary capacitance is maintained even when the panel size is reduced, optimizing space utilization and performance.

Implementation Method 1

a capacitor comprising a first metal layer, a second metal layer, a first dielectric between the first metal layer and the second metal layer

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

a first dielectric between the first metal layer and the second metal layer; a second dielectric between the first poly-silicon layer and the electrode layer

Methodology Applied
Scientific EffectDielectric: Dielectric

Data Source

PatentUS7796201B2Pixel device having a capacitor comprising metal layers and a capacitor having poly-silicon layers
Publication Date: 2010.09.14 HIMAX DISPLAY INC
  • US7796201B2 patent drawing
  • US7796201B2 patent drawing
  • US7796201B2 patent drawing

AI summary

A pixel device capable of composing a panel is provided herein. The pixel device includes a first switch, a first capacitor, and a second capacitor. The first switch delivers a pixel signal to a pixel electrode according to a control signal. The first capacitor has a first part of a first metal layer, a second metal layer, and a first dielectric coupled between the first part of the first metal layer and the second metal layer. The second capacitor has a first poly-silicon layer, an electrode layer, and a second dielectric coupled between the first poly-silicon layer and the electrode layer. The first and the second capacitors are parallel connected without increasing the area of the pixel and serve as a storage capacitor. Therefore, the pixel device can obtain more overall storage capacitance.