Pixel Electrode Non-Isosceles Trapezoid Slits

The patent applies asymmetry by designing the pixel electrode with non-isosceles trapezoid slits instead of conventional symmetric rectangular patterns. The slits have different widths at opposite ends, creating an asymmetric electric field distribution that prevents the formation of disclination lines while maintaining high transmittance. This asymmetric geometry fundamentally changes the alignment layer orientation pattern, eliminating the harmful symmetric stress concentrations that cause disclination defects.

The patent implements local quality by varying the slit dimensions and orientations in different regions of the pixel electrode. Each region has locally optimized slit configurations that control the liquid crystal alignment specifically for that area. This local optimization allows the electrode to maintain high transmittance in light-blocking regions while preventing disclination lines in critical display regions through tailored asymmetric slit patterns.

The asymmetric non-isosceles trapezoid slit design creates an uneven electric field distribution that prevents the formation of disclination lines. By making the slit widths different at opposite ends, the patent eliminates the symmetric stress patterns that cause defects, allowing high transmittance to be achieved without the harmful side effects of disclination lines at the pixel electrode boundaries.

The patent changes the geometric parameters of the slits from conventional rectangular shapes to non-isosceles trapezoid shapes with specific angle and dimension relationships. This parameter change transforms the electric field distribution and liquid crystal alignment patterns, eliminating disclination lines while preserving high transmittance characteristics.

The patent segments the pixel electrode into multiple strip-shaped slit groups arranged in specific patterns. Each group contains multiple parallel slits with non-isosceles trapezoid cross-sections. This segmentation approach allows the complex asymmetric geometry to be broken down into repeating modular units, making the manufacturing process more manageable while achieving the desired optical and alignment properties throughout the entire electrode.

The patent defines specific parameter ranges for the non-isosceles trapezoid slits, including angle constraints (e.g., 45 degrees) and dimensional relationships, to standardize the complex geometry. By establishing precise parameter specifications, the patent makes the complex electrode structure manufacturable with conventional fabrication processes, reducing the practical complexity despite the sophisticated geometry.