Light Detection Pixel Isolation Layout for Color Mixing and Strength
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Solution Overview
Problem
In light detection devices, the miniaturization of semiconductor layers between trench-type isolation regions to reduce color mixing leads to a trade-off with mechanical strength, affecting the reliability of the devices.
Innovation Solution
A light detection device with a semiconductor layer having a photoelectric conversion region defined by an isolation region, where the isolation region includes adjacent portions with different shaped side portions in cross-sectional view, enhancing mechanical strength and reducing color mixing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the semiconductor layer is miniaturized to reduce color mixing between photoelectric conversion regions, then color mixing is reduced, but mechanical strength is lowered
Solution Approach 1:
The patent applies different shapes to different side portions of the semiconductor layer locally. Specifically, first side portions adjacent to first isolation regions have a first shape, while second side portions adjacent to second isolation regions have a second shape different from the first. This local differentiation allows each side portion to be optimized for its specific function: maintaining mechanical strength where needed while minimizing color mixing in other areas.
Solution Approach 2:
The patent introduces asymmetry by making the first side portions and second side portions different in shape. The first side portions extend in a first direction with a first width, while the second side portions extend in a second direction (orthogonal to the first) with a second width. This asymmetric configuration allows the semiconductor layer to have different dimensional characteristics in different directions, enabling simultaneous optimization for both mechanical strength and color mixing reduction.
2Productivity
If the semiconductor layer is miniaturized to increase photoelectric conversion region density, then device integration is improved, but reliability is reduced
Solution Approach 1:
By assigning different shapes to different side portions, the patent allows certain portions of the semiconductor layer to maintain larger dimensions for mechanical strength while other portions are miniimized for high density. This local quality differentiation enables the device to achieve high integration density without uniformly compromising the mechanical strength of the entire semiconductor layer structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the reliability and miniaturization of photoelectric conversion regions by maintaining mechanical strength while reducing color mixing, thereby enhancing the performance of light detection devices.
Implementation Method 1
a semiconductor layer having a photoelectric conversion region defined by an isolation region
Data Source
AI summary
An object is to improve improvement in reliability. A light detection device includes a semiconductor layer having a photoelectric conversion region defined by an isolation region including a groove, in which the isolation region includes a first portion and a second portion adjacent to each other with the semiconductor layer in between in plan view, the semiconductor layer between the first portion and the second portion includes a first side portion on a side of the first portion and a second side portion on a side of the second portion, and the first side portion and the second side portion are different in planar shape.