Pixel Memory Circuit for Display Devices Without Data Conversion

The patent extracts the image processing functions from dedicated external circuits and relocates them to the pixel-level memory circuits. Each pixel's memory circuit retains correction signals and performs addition operations locally, eliminating the need for separate dedicated conversion and HDR processing circuits, thereby reducing overall power consumption while maintaining display quality.

The patent segments the image processing functionality into individual pixel units. Each pixel contains a memory circuit that independently stores correction signals and performs addition operations on image signals. This segmentation distributes the processing load across many small units rather than relying on a few high-power dedicated circuits, reducing total power consumption.

The patent changes the material parameters of the transistor from conventional silicon-based materials to metal oxide semiconductors. This material substitution enables lower operating voltages and reduced power consumption, allowing larger display devices to be constructed without proportionally increasing weight and power requirements.

The patent employs composite material structures including metal oxide semiconductor layers combined with specific insulating materials (such as silicon oxide, silicon nitride) and conductive materials. These composite structures optimize the balance between device performance, size, and weight, enabling larger screens without linear weight increases.

The patent changes the semiconductor material parameter from conventional silicon to metal oxide, which inherently provides lower off-state current due to its wider bandgap. The manufacturing process is adapted to deposit metal oxide layers using techniques like sputtering or atomic layer deposition, which, while requiring new equipment, follow established thin-film fabrication workflows, thus managing complexity.

The metal oxide transistor structure is designed to serve multiple functions: it provides low off-state current for power efficiency, enables high-resolution pixel addressing, and supports the integrated memory circuit functionality. This multi-functionality reduces the need for separate components, actually simplifying the overall device architecture despite the specialized material requirements.