Pixel Structure Recess Extension Electrode High Voltage Feed-Through
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Solution Overview
Problem
Display panels driven by high voltage require larger electrodes, leading to significant parasitic capacitance and increased feed-through voltage, which adversely affects the panel's performance.
Innovation Solution
A pixel structure with a substrate, gate electrode, capacitor electrode, insulation layer, active layer, drain electrode, source electrode, and extension electrode, where the insulation layer has a recess above the capacitor electrode and the extension electrode extends into this recess, reducing the distance between the electrodes and increasing storage capacitance to counteract feed-through voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If larger gate, source and drain electrodes are used to withstand high voltage, then voltage withstanding capability is improved, but parasitic capacitance increases
Solution Approach 1:
The invention introduces a vertical dimension by forming a recess in the insulation layer and extending the extension electrode downward into this recess. This vertical arrangement increases the effective storage capacitance without increasing the planar area of the electrodes, thereby reducing parasitic capacitance while maintaining voltage withstanding capability.
Solution Approach 2:
The extension electrode is nested within the recess formed in the insulation layer, creating a compact vertical structure. This nesting approach allows the capacitor structure to occupy three-dimensional space efficiently, increasing storage capacitance without expanding the overall device footprint or requiring larger electrode areas.
2Strength
If larger electrodes are used to withstand high voltage, then voltage withstanding capability is improved, but feed through voltage increases
Solution Approach 1:
By transitioning from a planar electrode arrangement to a vertical arrangement with the extension electrode extending into the recess, the invention increases storage capacitance without increasing electrode area. This dimensional change allows better control of feed through voltage while maintaining high voltage withstanding capability.
Solution Approach 2:
The invention changes the geometric parameters of the capacitor structure by creating a recess and extending the electrode vertically. This parameter change increases the effective capacitance value, which directly affects the feed through voltage characteristic, allowing it to be reduced without compromising voltage withstanding capability.
3Loss of energy
If extension electrode extends into recess, then storage capacitance increases, but insulation layer complexity increases
Solution Approach 1:
The recess is formed locally in the insulation layer only in the region where the extension electrode needs to extend, rather than modifying the entire insulation layer. This localized modification increases storage capacitance where needed while minimizing the overall structural complexity and maintaining simplicity in other regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased storage capacitance reduces feed-through voltage, enhancing the display panel's performance while maintaining sufficient insulation for high voltage operation.
Implementation Method 1
the capacitor electrode and the extension electrode can generate storage capacitance. Because the first insulation layer has the recess vertically above the capacitor electrode, and the extension electrode extends into the recess, a distance from the extension electrode to the capacitor electrode can be shortened due to the recess, and hence the storage capacitance can be increased.
Data Source
AI summary
A pixel structure includes a substrate, a gate electrode disposed on the substrate, a capacitor electrode disposed on the substrate, a first insulation layer, an active layer disposed on the first insulation layer, a drain electrode, a source electrode and an extension electrode. The capacitor electrode is spaced apart from the gate electrode. The first insulation layer covers the gate electrode and the capacitor electrode. The first insulation layer has a recess vertically above the capacitor electrode. The drain and the source electrodes are disposed on the active layer and spaced apart from each other. The extension electrode extends from the drain electrode or the source electrode into the recess.