Pixel Structure with Segmented Channel for Leakage Reduction
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Solution Overview
Problem
Existing liquid crystal display pixel structures suffer from leakage current issues, leading to abnormal frame displays such as flicker and crosstalk due to the inherent leakage current in thin film transistors.
Innovation Solution
A pixel structure design featuring a substrate with a thin film transistor, a gate insulating layer, and a semiconductive active layer with a channel region comprising a main channel region and sub channel regions, where the common electrode exposes the main channel region and covers at least a portion of the sub channel regions, allowing for enhanced electrical disconnection when the transistor is turned off to reduce leakage current without affecting resistance when turned on.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the common electrode covers the entire channel region to enhance electrical disconnection when turned off, then leakage current decreases, but resistance increases significantly when turned on
Solution Approach 1:
The channel region is segmented into main channel region and sub channel regions. The common electrode selectively covers only the sub channel regions while leaving the main channel region exposed, thereby reducing leakage current through enhanced electrical disconnection in sub channels without significantly increasing resistance when the transistor is turned on through the main channel.
Solution Approach 2:
Different regions of the channel are given different functions: the main channel region maintains low resistance for current flow when turned on, while the sub channel regions provide enhanced electrical disconnection to reduce leakage current when turned off. The common electrode is selectively positioned to cover only the sub channel regions, creating local quality differentiation.
2Object-generated harmful factors
If the channel length is increased to reduce leakage current, then electrical disconnection improves when turned off, but the transistor response speed decreases
Solution Approach 1:
The channel is divided into main channel region with shorter length for fast response and sub channel regions with longer length for reduced leakage. This segmentation allows the transistor to maintain fast response speed through the main channel while achieving better electrical disconnection through the extended sub channels.
Solution Approach 2:
Different channel regions have different length characteristics optimized for different functions: the main channel region has shorter length to ensure fast response speed, while the sub channel regions have longer length to enhance electrical disconnection and reduce leakage current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively decreases leakage current, preventing abnormal frame displays by ensuring the common electrode does not significantly impact the transistor's resistance when turned on and enhancing electrical disconnection when turned off, thereby improving display quality.
Implementation Method 1
when the thin film transistor is turned off, because the common electrode covers at least a portion of the at least one sub channel region, the electrical disconnection effect of the back channel region of the sub channel regions overlapping the common electrode can be enhanced due to the induction of the common voltage
Data Source
AI summary
A pixel structure includes a substrate, a thin film transistor and a common electrode. The thin film transistor is disposed on the substrate, wherein a semiconductive active layer of the thin film transistor has a channel region disposed between a source and a drain, the channel region includes a main channel region and at least one sub channel region, a channel length of the main channel region is less than a channel length of the at least one sub channel region, and the channel length of the main channel region is equal to a minimum of a channel length of the channel region. The common electrode is disposed on the thin film transistor, and the common electrode overlaps at least a portion of the at least one sub channel region, wherein the common electrode has an opening exposing the main channel region.