Imaging Pixel Semiconductor Buffer for Short Circuit Prevention
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Solution Overview
Problem
Existing imaging apparatuses lack effective methods to prevent pixel failures and improve manufacturing yield, particularly in configurations with light-shielded photodiodes, which can lead to short circuits and inaccurate failure detection.
Innovation Solution
The imaging apparatus incorporates a semiconductor area with a second conductivity type between the first semiconductor area and the transfer gate, reducing the risk of pixel failures by alleviating the electric field and preventing short circuits during shutter operations, and includes a voltage switch to manage potential differences between fixed voltage terminals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a pixel configuration with light-shielded photodiodes is used, then failure detection capability is improved, but pixel reliability deteriorates due to short circuit risks
Solution Approach 1:
A semiconductor area with opposite conductivity type is introduced as an intermediary between the first semiconductor area and the transfer gate. This intermediary region acts as a buffer that prevents direct electrical contact that would cause short circuits, while still allowing the pixel configuration to maintain its failure detection functionality.
Solution Approach 2:
The semiconductor area with opposite conductivity type is positioned beforehand between the first semiconductor area and the transfer gate to cushion or prevent potential short circuits. This preventive structure is built into the pixel design before operation, reducing the risk of pixel failure during shutter operations.
2Ease of manufacture
If conventional pixel configurations are used, then manufacturing simplicity is maintained, but manufacturing yield deteriorates due to pixel failures
Solution Approach 1:
The invention applies local quality by introducing a semiconductor area with opposite conductivity type specifically in the region between the first semiconductor area and the transfer gate. This localized modification targetedly addresses the short circuit risk without requiring complete redesign of the entire pixel structure, thus maintaining manufacturing simplicity while improving yield.
3Reliability
If the semiconductor area structure is added, then pixel failure prevention is improved, but device complexity increases
Solution Approach 1:
The semiconductor area with opposite conductivity type is added only in the specific region between the first semiconductor area and the transfer gate, rather than throughout the entire pixel. This localized approach prevents pixel failures without proportionally increasing overall device complexity.
Solution Approach 2:
The pixel structure becomes composite by incorporating regions with different conductivity types (first semiconductor area with one conductivity type and the intermediate semiconductor area with opposite conductivity type). This composite structure leverages the properties of different materials to achieve both failure prevention and maintained simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the accuracy of failure detection, prevents pixel failures, and improves the manufacturing yield of imaging apparatuses by avoiding short circuits and ensuring real-time imaging and failure detection.
Implementation Method 1
reducing the risk of pixel failures by alleviating the electric field and preventing short circuits during shutter operations
Data Source
AI summary
In an imaging apparatus, each of a plurality of pixels has a first semiconductor area having a first conductivity type, a floating diffusion area, and a transfer gate positioned between the first semiconductor area and the floating diffusion area. In a part of the plurality of pixels, a partial area of the first semiconductor area receives a potential supplied from a contact. The part of the plurality of pixels further has a second semiconductor area having a second conductivity type positioned between the partial area and the transfer gate in a planar view.