Pixel Separation Layout for Low-Crosstalk Solid-State Imaging

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional solid-state imaging elements with pixel separating sections between all pixels reduce the volume of photoelectric conversion units, leading to decreased quantum efficiency.

Innovation Solution

A solid-state imaging element with pixel separating sections disposed only at pixel boundaries extending in the X direction, minimizing crosstalk between different pixel columns while maintaining quantum efficiency by using compound semiconductors for photoelectric conversion units.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If pixel separating sections are formed between all pixels, then crosstalk is reduced, but the volume of photoelectric conversion units decreases and quantum efficiency is reduced

Engineering Contradiction:
ImprovecrosstalkVSAvoidquantum efficiency
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent applies local quality by making the pixel separating section selective rather than uniform across all pixel boundaries. Specifically, pixel separating sections are formed only at boundaries between pixel columns in the X direction, while omitting them at boundaries in the Y direction. This localized approach reduces crosstalk where it most affects wavelength separation (between columns) while preserving photoelectric conversion volume in regions where crosstalk is less problematic (between rows), thus resolving the contradiction between crosstalk reduction and quantum efficiency maintenance.

Inventive Principle:
Principle #3Local quality

2Object-affected harmful factors

If pixel separating sections are formed between all pixels, then crosstalk is reduced, but the volume of photoelectric conversion units decreases

Engineering Contradiction:
ImprovecrosstalkVSAvoidvolume of photoelectric conversion units
Core Design Contradiction:
Object-affected harmful factorsVSVolume of moving object

Solution Approach 1:

The patent implements local quality by differentiating the treatment of pixel boundaries based on their orientation. Pixel separating sections are strategically placed only at X-direction boundaries between pixel columns, while Y-direction boundaries between pixel rows within the same column lack these sections. This selective placement reduces crosstalk between columns (where it impacts wavelength separation) while maintaining larger photoelectric conversion unit volumes in Y-direction adjacent pixels, thereby resolving the contradiction between crosstalk reduction and volume preservation.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces crosstalk and maintains quantum efficiency, improving wavelength separation and sensitivity by preventing signal charge leakage between pixel columns.

Implementation Method 1

a plurality of pixels arranged in a two-dimensional matrix in an X direction and a Y direction and including a photoelectric conversion unit containing a compound semiconductor

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS12604544B2Solid-state imaging element
Publication Date: 2026.04.14 SONY SEMICON SOLUTIONS CORP
  • US12604544B2 patent drawing
  • US12604544B2 patent drawing
  • US12604544B2 patent drawing

AI summary

Provided is a solid-state imaging element with which it is possible to minimize crosstalk between different pixel columns while suppressing a decrease in quantum efficiency of a photoelectric conversion unit due to a pixel separating section. The solid-state imaging element includes a plurality of pixels arranged in a two-dimensional matrix in the X direction and the Y direction and including a photoelectric conversion unit (N-type semiconductor thin film) containing a compound semiconductor. In addition, the solid-state imaging element includes a pixel separating section disposed only at a pixel boundary extending in the X direction.