Pixel Structure Storage Capacitance Design

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Solution Overview

Problem

Liquid crystal displays with large size and high resolution suffer from insufficient storage capacitance, leading to defects such as inadequate effective charge-discharge time and pixel-voltage holding ability.

Innovation Solution

A pixel structure is introduced that includes a signal line, a common electrode line, a transistor with a semiconductor layer, a first storage electrode insulated from the common electrode line, and a second storage electrode connected to the common electrode line, forming a first storage capacitance between them, which increases the storage capacitance by utilizing the non-display region between the signal and common electrode lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the display size and resolution are increased, then the image quality is improved, but the storage capacitance becomes insufficient

Engineering Contradiction:
Improveimage qualityVSAvoidstorage capacitance
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The invention utilizes the non-display region between the signal line and common electrode line as a new spatial dimension to accommodate storage electrodes. By forming first and second storage electrodes in this previously unused space, the patent increases storage capacitance without reducing the display area or resolution, thus resolving the contradiction between improved image quality and sufficient storage capacitance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Duration of action of moving object

If the storage capacitance is increased, then the charge-discharge time and voltage holding ability are improved, but the pixel structure complexity increases

Engineering Contradiction:
Improvecharge-discharge timeVSAvoidpixel structure complexity
Core Design Contradiction:
Duration of action of moving objectVSDevice complexity

Solution Approach 1:

The non-display region between the signal line and common electrode line serves multiple functions: it maintains electrical insulation between signal and common electrodes while simultaneously providing space for storage electrodes. This multi-functional use of the same spatial region increases storage capacitance without proportionally increasing structure complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The invention merges the insulation function with the storage function by having the first storage electrode extend into the non-display region where it naturally provides insulation between the signal line and common electrode line. This combining of functions reduces overall structural complexity while achieving increased storage capacitance.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The enhanced storage capacitance improves the effective charge-discharge time and pixel-voltage holding ability, reduces charge loss due to leakage currents, and minimizes defects like driving resistance increase and flicker, while efficiently utilizing spare space in the pixel structure.

Implementation Method 1

the portion of the first storage electrode overlaps the portion of the second electrode, to form a first storage capacitance between the first storage electrode and the second storage electrode

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11237440B2Pixel structure and manufacturing method thereof, array substrate and display device
Publication Date: 2022.02.01 BOE TECHNOLOGY GROUP CO LTD
  • US11237440B2 patent drawing
  • US11237440B2 patent drawing
  • US11237440B2 patent drawing

AI summary

A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.